Výsledky vyhledávání - "M E Rudinsky"

Stress-dislocation management in MOVPE of GaN on SiC wafers

Autor: W. V. Lundin, E.V. Yakovlev, A. V. Sakharov, A. F. Tsatsul’nikov, E. E. Zavarin, M. E. Rudinsky, L. E. Velikovskiy

Publikováno v: physica status solidi (a). 213:2759-2763

A combined experimental and modeling study of stress and curvature evolution during (0001) GaN growth on (0001) 4H-SiC wafers is presented. It is shown that the GaN layers are under the compressive stress, whose magnitude depends on the composition o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::beb8cdc2bcf2eecd15f36ae5ce01c075
https://doi.org/10.1002/pssa.201600210

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Local triboelectrification of an n-GaAs surface using the tip of an atomic-force microscope

Autor: V. M. Lantratov, S. A. Mintairov, S. G. Konnikov, N. A. Kalyuzhnyy, M. E. Rudinsky, Pavel N. Brunkov, R. V. Sokolov, N. Yu. Gordeev, A. A. Gutkin, V. V. Goncharov

Publikováno v: Semiconductors. 47:1170-1173

The method of scanning Kelvin-probe microscopy is used to show that the effect of triboelectrification is observed when the tip of an atomic-force microscope interacts with the surface of n-GaAs epitaxial layers. The sign of the change in the potenti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f3f48fa385764c04b9fb54e6b1dc32fe
https://doi.org/10.1134/s1063782613090054

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Electron states at electrolyte/n-GaN and electrolyte/n-InGaN interfaces

Autor: Pavel N. Brunkov, A. A. Gutkin, M. E. Rudinsky

Publikováno v: Semiconductors. 46:755-758

The differential capacitance and differential active conductance of rectifying contacts of n-GaN and n-InxGa1 − xN (x ≈ 0.15) with an electrolyte (0.2 M aqueous solutions of NaOH, NaCl, or HCl) have been studied. It was found that electron states

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::97d25b622f39f1b34aec8c013675d2fb
https://doi.org/10.1134/s1063782612060176

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Surface electrostatic potential of inn epitaxial layers and its changes during anodic oxidization

Autor: A. A. Gutkin, M. E. Rudinsky, Pavel N. Brunkov

Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 6:420-423

An estimation carried out via scanning Kelvin probe microscopy (SKPM) confirms that valleys on the initial surface of n-type InN layers correspond to a decrease in electrostatic potential by at least several millivolts. At the same time, surfaces sub

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::556e55d3df2fecd12243ebd8c733abb4
https://doi.org/10.1134/s1027451012050187

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Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds

Autor: A. A. Shakhmin, A. A. Gutkin, D. Yu. Kazantsev, M. E. Rudinsky, A. Yu. Egorov, A. A. Sitnikova, Pavel N. Brunkov, S. G. Konnikov, B. Ya. Ber, O. I. Ronghin, V. E. Zemlyakov

Publikováno v: Semiconductors. 45:811-817

The depth distribution of free carriers over the HEMT structures with quantum-well layers is studied by electrochemical capacitance-voltage profiling. It is shown that the actual distribution of the concentration of free carriers and their energy spe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ff8be5ebad58f26031ce91cf04bcfb23
https://doi.org/10.1134/s1063782611060078

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Capacitance-voltage characteristics of the electrolyte-n-InN surface and electron states at the interface

Autor: M. E. Rudinsky, Pavel N. Brunkov, A. A. Gutkin

Publikováno v: Semiconductors. 44:1020-1024

Dependences of differential capacitance of the system degenerate n-InN-electrolyte on the voltage are measured at a frequency of the probing voltage of 300 Hz. Qualitative analysis of these characteristics is performed based on a one-dimensional mode

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dbe5033b9194374bfa562c346d753a49
https://doi.org/10.1134/s1063782610080117

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Band bending of n-InN epilayers and exact solution of the classical Thomas–Fermi equation

Autor: A. A. Klochikhin, Hong-Ying Chen, V. Yu. Davydov, Shangjr Gwo, A. A. Gutkin, Pavel N. Brunkov, M. E. Rudinsky, I. Yu. Strashkova

Publikováno v: physica status solidi (RRL) – Rapid Research Letters. 1:159-161

The exact solution of the Thomas–Fermi equation for a planar accumulation layer of a degenerate semiconductor is presented. The obtained results are compared with theoretical literature data. The applicability of the solution is demonstrated by usi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1c01604dac34e2af32c521e86b08aedb
https://doi.org/10.1002/pssr.200701096

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