Zobrazeno 1 - 8
of 8
pro vyhledávání: '"M E Little"'
Publikováno v:
Structural Chemistry. 18:203-207
A non-Schiff base (Te, N, O) ligand MeOC6 H4TeCH2CH2NHCH(CH3)C6H4–2–OH (LH) having a chiral center and its palladium(II) complex [PdClL]·CH2Cl2 (1) have been synthesized. Both have characteristic 1H and 13C NMR spectra. The single crystal struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcadef31699c440a01df052b92ea7af9
https://doi.org/10.1007/s11224-006-9077-2
https://doi.org/10.1007/s11224-006-9077-2
Autor:
John E. Drake, Charles L. B. Macdonald, Sumit Bali, Ajai K. Singh, Michael B. Hursthouse, M. E. Little, Garima Singh
Publikováno v:
Inorganica Chimica Acta. 358:912-918
Two tellurium ligands 1-(4-methoxyphenyltelluro)-2-[3-(6-methyl-2-pyridyl)propoxy]ethane (L 1) and 1-ethylthio-2-[2-thienyltelluro]ethane (L2) have been synthesized by reacting nucleophiles [4-MeO-C6H4Te~] and [C4H3S-2-Te~] with 2-[3-(6-methyl-2-pyri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d49cb6e2d03a6515a2216a52a8e663aa
https://doi.org/10.1016/j.ica.2004.10.021
https://doi.org/10.1016/j.ica.2004.10.021
Publikováno v:
MRS Proceedings. 667
Amorphous alloys of aluminum-gallium nitride doped with erbium (Er) were deposited at 300 K. The compositions ranged from 19% Al to 86% Al with optical band gaps varying linearly with composition from 3.4 eV (GaN) to 6.2 eV (AlN). The films were depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3f0ce6ad02e437974709862c48f398c
https://doi.org/10.1557/proc-667-g3.8
https://doi.org/10.1557/proc-667-g3.8
Autor:
M. E. Little, M. E. Kordesch
Publikováno v:
MRS Proceedings. 693
Reactive sputtering was used to grow thin films of ScxGa1-xN with scandium concentrations of 20%-70% on quartz substrates at temperatures of 300-675 K. X-ray diffraction (XRD) of the films showed either weak or no structure, suggesting the films are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26e88353271cf1963809cbdabc61292b
https://doi.org/10.1557/proc-693-i3.29.1
https://doi.org/10.1557/proc-693-i3.29.1
Autor:
M. E. Kordesch, M. E. Little
Publikováno v:
Applied Physics Letters. 78:2891-2892
Reactive sputtering was used to grow thin films of ScxGa1−xN with scandium concentration of 20%–70% on quartz substrates at temperatures of 300–675 K. X-ray diffraction (XRD) of the films showed either weak or no structure, suggesting the films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::037828c9af07278cb84d1821982465e9
https://doi.org/10.1063/1.1370548
https://doi.org/10.1063/1.1370548
Publikováno v:
Journal of psychiatric nursing and mental health services. 15(5)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::4399a78b0269c0837fdf10a3a3a840a1
https://pubmed.ncbi.nlm.nih.gov/194035
https://pubmed.ncbi.nlm.nih.gov/194035
Autor:
M. E. Little
Publikováno v:
Psychiatric Services. 12:32-32
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31b7a8432c65b0e7e93597e763738a21
https://doi.org/10.1176/ps.12.1.32
https://doi.org/10.1176/ps.12.1.32