Zobrazeno 1 - 10
of 44
pro vyhledávání: '"M E Law"'
Autor:
M. E. Law
Publikováno v:
IBM Journal of Research and Development. 46:339-346
Process modeling is an integral portion of technology computer-aided design (TCAD) and can be used to predict device structures and doping. Truly predictive process modeling has proven to be an elusive goal, because the controlling physics is complic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d45aeeff490b5b40bb70c15b2b81e68e
https://doi.org/10.1147/rd.462.0339
https://doi.org/10.1147/rd.462.0339
Publikováno v:
Mayo Clinic Proceedings. 73:132-137
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fc2cb763aa5e84d474fd1054e4a8b03
https://doi.org/10.4065/73.2.132
https://doi.org/10.4065/73.2.132
Publikováno v:
Materials and Reliability Handbook for Semiconductor Optical and Electron Devices ISBN: 9781461443360
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65cd7838c3d9df4e6e774566d17567ae
https://doi.org/10.1007/978-1-4614-4337-7_16
https://doi.org/10.1007/978-1-4614-4337-7_16
Publikováno v:
Journal of Applied Physics. 73:955-960
Short‐time/low‐temperature thermal oxidation is known to lead to point defect perturbations in silicon. This study investigates the interaction between oxidation‐induced point defects and type II dislocation loops intentionally introduced in si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e60bd5d7eaa4e3d8e6a72b6674545b68
https://doi.org/10.1063/1.353309
https://doi.org/10.1063/1.353309
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
A novel kerf-free process for achieving crystalline silicon with thickness ≅25µm on metal (SOM) is overviewed, and fabrication of back-contact (BC) solar cells in the thin silicon wafers is described. An object-oriented 2-D device simulator is set
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df54318b403168d3440fa5c2543eba37
https://doi.org/10.1109/pvsc.2010.5614466
https://doi.org/10.1109/pvsc.2010.5614466
Publikováno v:
Vacuum. 43:111-114
For the first time in the UK, the deposition of amorphous silicon-germanium layers from SiH 4 and GeH 4 gaseous sources has been carried out using plasma enhanced vapour deposition, at low temperatures and pressures. The partial pressures of the sour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05474d9cd3413dba40fd4e3fa3ee237a
https://doi.org/10.1016/0042-207x(92)90194-2
https://doi.org/10.1016/0042-207x(92)90194-2
Publikováno v:
Noise in Physical Systems and 1/F Fluctuations.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93ab899748a0454f714440d95d9217ae
https://doi.org/10.1142/9789812811165_0143
https://doi.org/10.1142/9789812811165_0143
Publikováno v:
Mayo Clinic proceedings. 72(8)
To test fluorescence in situ hybridization (FISH) probes for rapid detection of aneuploidy of chromosomes 13, 18, 21, X, and Y from newborn uncultured blood samples.Directly labeled, multicolored, commercially available FISH probes for the five afore
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::edde653c74d69cea23cba8e00892b299
https://pubmed.ncbi.nlm.nih.gov/9276596
https://pubmed.ncbi.nlm.nih.gov/9276596
Autor:
G W, Dewald, C R, Schad, E R, Christensen, M E, Law, A R, Zinsmeister, P G, Stalboerger, S M, Jalal, R C, Ash, R B, Jenkins
Publikováno v:
Bone marrow transplantation. 12(2)
We investigated the efficacy of fluorescence-labelled chromosome probes (CEP-X/Y) for the X and Y chromosomes to study patients who have had opposite sex BMT. These probes hybridize to the centromere region of the X chromosome and nearly the entire l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::955af51ff68120ec51007f499811c33e
https://pubmed.ncbi.nlm.nih.gov/8401362
https://pubmed.ncbi.nlm.nih.gov/8401362
Autor:
M. E. Law
Publikováno v:
Simulation of Semiconductor Devices and Processes ISBN: 9783709173725
This paper will identify the reasons three-dimensional process simulators are not widely available, when three-dimensional device simulators are widely available. There appear to be four major obstacles; metrology, models, numerics, and structural ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26ab67e7bb229b98ce1973660c56ae38
https://doi.org/10.1007/978-3-7091-6657-4_1
https://doi.org/10.1007/978-3-7091-6657-4_1