Zobrazeno 1 - 10
of 20
pro vyhledávání: '"M Dubslaff"'
Autor:
T Schumann, M Dubslaff, M H Oliveira Jr, M Hanke, F Fromm, T Seyller, L Nemec, V Blum, M Scheffler, J M J Lopes, H Riechert
Publikováno v:
New Journal of Physics, Vol 15, Iss 12, p 123034 (2013)
Growth of nanocrystalline graphene films on (6√3 × 6√3) R 30°-reconstructed SiC surfaces was achieved by molecular beam epitaxy, enabling the investigation of quasi-homoepitaxial growth. The structural quality of the graphene films, which is in
Externí odkaz:
https://doaj.org/article/3a24646a7e3d4e5f91cc3eea81528c66
Autor:
M. H. Oliveira, Henning Riechert, U. Jahn, Joseph M. Wofford, J M J Lopes, M. Dubslaff, Timo Schumann, M. Hanke, Lutz Geelhaar
Publikováno v:
Journal of Crystal Growth. 425:274-278
We examine how substrate selection impacts the resulting film properties in graphene growth by molecular beam epitaxy (MBE). Graphene growth on metallic as well as dielectric templates was investigated. We find that MBE offers control over the number
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64d867401ea12e038b101c3e70ae655d
https://doi.org/10.1016/j.jcrysgro.2015.02.060
https://doi.org/10.1016/j.jcrysgro.2015.02.060
Autor:
Michael Hanke, Henning Riechert, Timo Schumann, Joao Marcelo J. Lopes, M. H. Oliveira, M. Dubslaff
Grazing incidence X-ray diffraction (GID) was employed to probe the structure of atomically thin carbon layers on SiC(0001): a so-called buffer layer (BL) with a $6(\sqrt{3}\times\sqrt{3})$R30$^\circ$ periodicity, a monolayer graphene (MLG) on top of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::152f99cecc24b9a4e90a1358dc8e4f55
Autor:
Richard Dronskowski, Markus Apel, Giacomo Miceli, Raffaella Calarco, Peter Zalden, Françoise Hippert, Matthias Wuttig, Jonas Laehnemann, Karthick Perumal, J. Y. Raty, Alexander Thiess, Davide Donadio, Rudolf Zeller, Marco Bernasconi, Alexander V. Kolobov, Henning Riechert, Pierre Noé, Peter Rodenbach, Marck Lumeij, Jean-Yves Raty, Efim A. Brener, S. Caravati, E. Souchier, Giada Ghezzi, Wei Zhang, M. Dubslaff, Christophe Bichara, Riccardo Mazzarello, Sylvain Maitrejean, Paul Fons, Ralf P. Stoffel, Peter H. Dederichs, Alessandro Giussani, Manfred Burghammer, Volker L. Deringer, Michael Hanke, Stefan Blügel, Fatemeh Tabatabaei, Jörg Behler, Gabriele C. Sosso
Publikováno v:
Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17 to 20 2012, Aachen, Germany
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e09946728f99683ddcc548994f994973
https://doi.org/10.1002/9783527667703.ch37
https://doi.org/10.1002/9783527667703.ch37
Akademický článek
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Autor:
Karthick Perumal, Michael Hanke, A. V. Kolobov, Henning Riechert, Alessandro Giussani, M. Dubslaff, R. Calarco, Peter Rodenbach, Manfred Burghammer, Paul Fons
Publikováno v:
Applied Physics Letters. 101:061903
Epitaxial Ge2Sb2Te5 films grown on Si(111) by molecular beam epitaxy were reversibly switched between crystalline and amorphous states over a large area using femtosecond laser pulses. The structural and spatial homogeneity of the as-grown epitaxial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a9edff143106ee16a97cbabe2e4e5ec
https://doi.org/10.1063/1.4742919
https://doi.org/10.1063/1.4742919
Autor:
M. Dubslaff, Gregory J. Salamo, Zh. M. Wang, Christian G. Schroer, Michael Hanke, Robert Hoppe, M. Burghammer, Jihoon Lee, S. Schöder, Yu. I. Mazur
Publikováno v:
Applied Physics Letters. 98:213105
In(Ga)As quantum dots, which laterally self-assemble into quantum dot molecules, have been studied by scanning x-ray nanodiffraction, finite element calculations and subsequent kinematical diffraction simulations. X-ray beam sizes of 100 nm enable sm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c172cec9ed65b4c8aae9156732e501bc
https://doi.org/10.1063/1.3593960
https://doi.org/10.1063/1.3593960
Publikováno v:
Applied Physics Letters. 96:133107
Individual self-assembled SiGe/Si(001) dot molecules were investigated by scanning x-ray nanodiffraction with a beam size of 250 nm in diameter (full width at half maximum). The samples contain dot molecules with either one, two, three, or four dots.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b5dd2f3dba40377f9b61e50c128331b
https://doi.org/10.1063/1.3373916
https://doi.org/10.1063/1.3373916
Autor:
Martin Schmidbauer, Petr M. Lytvyn, Yu. I. Mazur, M. Dubslaff, Gregory J. Salamo, Michael Hanke, Zh. M. Wang, Jihoon Lee
Publikováno v:
Applied Physics Letters. 95:023103
A detailed growth scenario of surface quantum dot molecules (QDM) in the system (In,Ga)As/GaAs(001) has been investigated in terms of shape and elastic strain evolution. QDMs are grown by a combined approach using droplet epitaxy for initial homoepit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11b91b12c2aca72d23402ba07c08984d
https://doi.org/10.1063/1.3176409
https://doi.org/10.1063/1.3176409
Autor:
C. Riekel, Jens Patommel, Torsten Boeck, Martin Schmidbauer, S. Schöder, M. Dubslaff, Christian G. Schroer, M. Burghammer, Michael Hanke
Publikováno v:
Applied Physics Letters. 92:193109
We report a scanning technique, which combines high resolution x-ray diffraction (in reciprocal space) along with a submicrometer spatial resolution (in real space). SiGe∕Si(001) Stranski–Krastanow islands served here as a well investigated model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99911f89eefc6ed7f09079772def283f
https://doi.org/10.1063/1.2929374
https://doi.org/10.1063/1.2929374