Zobrazeno 1 - 10
of 724
pro vyhledávání: '"M C Tringides"'
Autor:
T. C. Chan
Publikováno v:
Journal of the American Chemical Society. 120:9975-9975
Publikováno v:
Physical Review B. 107
Autor:
M C Tringides, M Yakes
Publikováno v:
The Journal of Physical Chemistry A. 115:7096-7104
High resolution spot profile analysis low energy electron diffraction (SPA-LEED) and variable temperature scanning tunneling microscopy (STM) have been used to observe the growth of Pb on the Pb/Si(111)-α√3×√3 phase, which is driven by quantum
Autor:
Schölzel, Franziska1,2, Richter, Peter1, Unigarro, Andres David Peña1, Wolff, Susanne1,2, Schwarz, Holger1, Schütze, Adrian1,2, Rösch, Niels1, Gemming, Sibylle1, Seyller, Thomas1,2, Schädlich, Philip1,2 philip.schaedlich@physik.tu-chemnitz.de
Publikováno v:
Small Structures. Oct2024, p1. 14p. 11 Illustrations.
Autor:
K. R. Roos, M. C. Tringides
Publikováno v:
Surface Review and Letters. :833-840
Interlayer diffusion is controlled by the probability that an atom will hop from a higher to a lower level. This probability depends on the additional step edge barrier ΔEs which an atom experiences at a step because of the lower coordination as it
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 25(39)
Structural transformations at the Pb/Si(111) surface occurring upon C₆₀ adsorption onto Pb/Si(111)1 × 1 phase at room temperature and Pb/Si(111)[Formula: see text] at low temperatures between 30 and 210 K, have been studied using scanning tunnel
Autor:
M. C. Tringides, M. L. Lozano
Publikováno v:
Europhysics Letters (EPL). 30:537-542
We have used the STM to study surface diffusion from the time dependence of the tunneling current. Results were obtained for the power spectrum, W(f), of oxygen adsorbed on stepped Si(111). The measured W(f) for clean Si(111) shows no temperature dep
Autor:
M. C. Tringides, K. R. Kimberlin
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:462-466
Electrical transport in ultrathin films of Ag on the Si(111)‐7×7 surface has been studied as a function of the incident flux rate in situ at room temperature with a four‐probe technique. The origin of conduction in this system is unclear: two di
Autor:
Chesnyak, Valeria1,2 (AUTHOR), Stavrić, Srdjan1,3 (AUTHOR), Panighel, Mirco2 (AUTHOR) panighel@iom.cnr.it, Povoledo, Daniele1 (AUTHOR), del Puppo, Simone1 (AUTHOR), Peressi, Maria1,4 (AUTHOR), Comelli, Giovanni1,2 (AUTHOR), Africh, Cristina2 (AUTHOR)
Publikováno v:
Small Structures. Aug2024, Vol. 5 Issue 8, p1-10. 10p.
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 23(26)
We use scanning tunneling microscopy to measure densities and characteristics of Ag islands that form on the (√3 × √3)R30°-Ag phase on Si(111), as a function of deposition temperature. Nucleation theory predicts that the logarithm of island den