Zobrazeno 1 - 10
of 18
pro vyhledávání: '"M C Tamargo"'
Publikováno v:
Journal of Applied Physics. 96:7164-7167
The mechanisms controlling the growth rate and composition of epitaxial CdTe and CdZnTe films were studied. The films were grown by isothermal closed space configuration technique. A GaAs 100 substrate was exposed sequentially to the elemental source
Autor:
Igor L. Kuskovsky, Irving P. Herman, X. Zhou, V. M. Belous, V. A. Smyntyna, Gertrude F. Neumark, V. A. Pasternak, M. C. Tamargo, Jonathan E. Spanier, Y. Gu, O. Maksimov
Publikováno v:
Journal of Physical Studies. 8:384-388
Autor:
L.C. Hernandez, Jaime Santoyo-Salazar, Guillermo Santana, O. de Melo, Gerardo Contreras-Puente, K. Gutierrez Z-B, M. C. Tamargo, P. G. Zayas-Bazán, J. C. González, J. Esau Romero-Ibarra
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
In this work, CdS nanowires (NWs) were prepared by the vapor-liquid-solid (VLS) method using Au catalytic nanoparticles (NPs) deposited on different substrates. Scanning and transmission electron microscopy techniques (SEM, TEM) allowed observing NWs
Study of temperature-dependent exciton dynamics in a single quantum well with self-assembled islands
Publikováno v:
Surface Science. :810-813
We present an investigation of the exciton dynamics in a single quantum well with self-assembled islands. We combine continuous-wave and time-resolved luminescence measurements as a function of the temperature to obtain quantitative information on th
Publikováno v:
Semiconductor Science and Technology. 6:A152-A156
Electrolyte electroreflectance (EER) is used to investigate the interface between undoped ZnSe and heavily n-doped GaAs. The evolution of the signal with bias allows an identification of the various features in the EER spectra. The spectra allow us t
Publikováno v:
Applied Physics Letters. 75:3494-3496
The asymmetric line shape of the transient photoluminescence (PL) spectra of high-quality Zn1−x−yMgxCdySe epilayers is deconvoluted to a narrow and a broad Gaussian peak at each time delay. The fitted energy difference between the two peaks corre
Publikováno v:
Applied Physics Letters. 72:1317-1319
The quality of lattice-matched ZnxCdyMg1−x−ySe epitaxial layers grown on (001) InP substrates with a III-V buffer layer has been improved by initially growing a ZnCdSe interfacial layer (50 A) at low temperature. The widths of double crystal x-ra
Publikováno v:
Applied Physics Letters. 69:4200-4202
We report on the experimental observation of quantum carrier confinement near the ZnCdSe/InP interface using the capacitance voltage profiling technique. Three subband states are identified at different spatial position‐expectation value. Type II b
Non-equilibrium Approach to Doping of Wide Bandgap materials by Molecular Beam Epitaxy. Final Report
Autor:
M. C. Tamargo, G. F. Neumark
It is well known that it has been difficult to obtain good bipolar doping in a wide bandgap semiconductors. Developed a new doping technique, involving use of a standard dopant, together with a ''co-dopant'' used to facilitate the introduction of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::919c29440d7f08c02051902449fc1877
https://doi.org/10.2172/824891
https://doi.org/10.2172/824891