Zobrazeno 1 - 10
of 57
pro vyhledávání: '"M Bujatti"'
Autor:
M. Bujatti
Publikováno v:
13th European Microwave Conference, 1983.
The most recent developments in GaAs MESFET's are reviewed and compared to the progress of other fast three-terminal devices potentially of interest for mm-wave applications. An attempt is made at predicting future performance by extrapolating the pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::845ec128bdcc13b8b1758be82fa2c23a
https://doi.org/10.1109/euma.1983.333212
https://doi.org/10.1109/euma.1983.333212
Autor:
M. Bujatti, F.N. Sechi
Publikováno v:
2006 67th ARFTG Conference.
Microwave power amplifiers designed for instrumentation are characterized by a range of properties which sets them apart from other types of applications. Broad bandwidths are generally desired, and so are low noise (both in amplitude and phase), hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ad95b4b06988d6c4df6773edb66030d
https://doi.org/10.1109/arftg.2006.4734342
https://doi.org/10.1109/arftg.2006.4734342
Autor:
F.N. Sechi, M. Bujatti
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest.
A novel monolithic ceramic technology especially developed for high-power applications is proposed. Broadband power amplifiers based on this technology have demonstrated output powers in the range of 1-2 W over the 6-18-GHz frequency band, with good
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f437660af6a794497ba6baabb552219c
https://doi.org/10.1109/mwsym.1989.38876
https://doi.org/10.1109/mwsym.1989.38876
Publikováno v:
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
The paper describes a highly integrated 30 W power amplifier for a Synthetic Aperture Radar, operating in the 14-16 GHz band. The use of a waveguide radial combiner, a microstrip power divider and direct microstrip to waveguide transitions, in combin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34658c8eb069db779467901c16d92ae7
https://doi.org/10.1109/mwsym.1994.335106
https://doi.org/10.1109/mwsym.1994.335106
Autor:
M, Teschler-Nicola, F, Gerold, M, Bujatti-Narbeshuber, T, Prohaska, C, Latkoczy, G, Stingeder, M, Watkins
Publikováno v:
Collegium antropologicum. 23(2)
The early Neolithic fortified settlement of Schletz, Lower Austria is emerging as one of the most interesting sites of Linear Pottery culture excavation in Austria. In the course of systematic investigations carried out since 1983, a plethora of unex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::65fb2ff270b9bab51a12136165d6988c
https://pubmed.ncbi.nlm.nih.gov/10646219
https://pubmed.ncbi.nlm.nih.gov/10646219
Autor:
M. Bujatti, F. Sechi
Publikováno v:
47th ARFTG Conference Digest.
The tremendous growth of commercial communications has brought about an increased demand for high power solid state devices with good linearity and thus a need for sophisticated characterization techniques at high power levels. At the same time, even
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::720cc56d357ec246553c2ff0680e225b
https://doi.org/10.1109/arftg.1996.327162
https://doi.org/10.1109/arftg.1996.327162
Autor:
M. Bujatti, Faa-Ching Wang
Publikováno v:
IEEE Transactions on Electron Devices. 32:2839-2843
An increase of about 40 percent in dc transconductance and RF gain of directly ion-implanted GaAs MESFET's was observed when the substrates were subjected to an extrinsic gettering treatment before ion implantation. The gettering treatment consisted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc0f958999b5d7a0011476bc9ad7a306
https://doi.org/10.1109/t-ed.1985.22424
https://doi.org/10.1109/t-ed.1985.22424
Autor:
D.J. Miller, M. Bujatti
Publikováno v:
IEEE Transactions on Electron Devices. 34:1239-1244
Low-frequency oscillations in GaAs MESFET's were observed under back-gating conditions. The FET oscillations are directly related to oscillations in leakage currents in the semi-insulating GaAs substrate. The occurrence of these oscillations in the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08be5344e4efbe357f044d83e2c3a8f6
https://doi.org/10.1109/t-ed.1987.23076
https://doi.org/10.1109/t-ed.1987.23076
Publikováno v:
Physical Review B. 13:3984-3990
Low-temperature electrical-resistivity measurements are reported for dilute alloys of Cu with approximately 100-ppm Mn which have been doped with Ni, Pd, and Pt additions at concentrations ranging from a few tenths to a few atomic percent. Whereas Ni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa895553db61ed377f474465153da478
https://doi.org/10.1103/physrevb.13.3984
https://doi.org/10.1103/physrevb.13.3984
Publikováno v:
Journal of Physics C: Solid State Physics. 9:4281-4284
The optical absorption of CdS was measured in a high vacuum after desorption of chemisorbed species. The absorption edge obtained under these conditions was found to be significantly different from the absorption edge obtained in air under atmospheri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52f40c1323ae89e46177ebdb661f5525
https://doi.org/10.1088/0022-3719/9/23/012
https://doi.org/10.1088/0022-3719/9/23/012