Zobrazeno 1 - 10
of 37
pro vyhledávání: '"M Bjorkqvist"'
Publikováno v:
IEEE Sensors Journal. 6:542-547
Different ways to reduce hysteresis in a capacitive-type thermally carbonized porous silicon (TC-PS) humidity sensor are studied and compared. Modification of the contact angle of the dielectric surface, enlargement of the pore size of dielectric, an
Publikováno v:
Physical Review B. 61:4963-4967
We have investigated the Li-induced phase transition from the Ge(111)3X1:Li to the Ge(111)root 3X root 3:Li reconstruction with photoemission. The Ge(111)3X1:Li reconstruction can be described as p ...
Autor:
M Bjorkqvist, Hiroshi Kumigashira, Ingolf Lindau, Takashi Takahashi, Oscar Tjernberg, Mats Göthelid, Lamberto Duò, G. Chiaia, S.-H. Yang, T. Suzuki
Publikováno v:
Scopus-Elsevier
One of the most interesting problems, in the study of the electronic structure of Ce compounds, is the evaluation of the intrinsic linewidth of the atomiclike Ce 4$f$ states in low Kondo temperature compositions. In this context, the case of CeSe is
Publikováno v:
Surface Review and Letters. :119-124
A comparative study of the interaction of iodine and chlorine with Ge(1111) and Ge(100) has been performed using photoelectron spectroscopy. On the Ge(111) surface both adsorbates preferentially occupy the on-top T 1 site. In addition small amounts o
Publikováno v:
Physical Review B. 57:2327-2333
Core-level and valence-band photoelectron spectroscopy on the dissociative adsorption of ammonia on Si(111) 7 X 7 is presented. Adsorption at room temperature produces three nitrogen 1s components, ...
Publikováno v:
Surface Science. 395:111-119
The two inequivalent sides of InSb(211) have been studied by scanning tunneling microscopy (STM), angle-resolved photoelectron spectroscopy (ARPS) and low-energy electron diffraction (LEED). Despite identical sputtering–annealing preparations, the
Publikováno v:
Surface Science. 371:264-276
The Ge(111)-I surface has been studied at different I coverages ranging from 0.05 ML up to saturation, and different annealing temperatures, using photoelectron spectroscopy (PES) and scanning tunneling microscopy (STM). At saturation the surface is
Publikováno v:
Surface Science. 366:121-128
The valence and core electronic structure of the sputtered and annealed 1 × 1 periodic GaAs(311)A surface has been studied by angle-resolved photoelectron spectroscopy. Five surface bands are identified and their dispersions along high symmetry line
Publikováno v:
Applied Surface Science. :113-117
Go-adsorption of tin and potassium is found to induce a 3x1 reconstruction on the Ge(lll) surface. A very small amount of tin influences the Ge 3d core level spectra substantially compared to the G ...
Autor:
E. Janin, Ulf O. Karlsson, C M Pradier, Mats Göthelid, M Bjorkqvist, A Rosengren, T. M. Grehk
Publikováno v:
Applied Surface Science. 99:371-378
Investigation of the clean and atomic hydrogen covered Pt (111)( 3 × 3 ) R 30° -Sn surface alloy has been carried out using high resolution core level photoelectron spectroscopy. The Pt 4 f 7 2 spectrum recorded from the clean surface alloy shows a