Zobrazeno 1 - 10
of 100
pro vyhledávání: '"M B Johnson"'
Publikováno v:
Molecular Plant-Microbe Interactions, Vol 37, Iss 2, Pp 155-165 (2024)
The plant hormone indole-3-acetic acid (IAA), also known as auxin, plays important roles in plant growth and development, as well as in several plant–microbe interactions. IAA also acts as a microbial signal and in many bacteria regulates metabolis
Externí odkaz:
https://doaj.org/article/745da73833c141ab8b50e6a2d7bc272e
Publikováno v:
JBJS Open Access
Background: Fusionless techniques for the treatment of neuromuscular early-onset scoliosis (EOS) are increasingly used to preserve spinal and thoracic growth and to postpone posterior spinal fusion (PSF). These techniques have greatly improved thanks
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5086aa6766f93938336f6135a5be0327
https://doi.org/10.2106/jbjs.oa.21.00089
https://doi.org/10.2106/jbjs.oa.21.00089
Autor:
P. Beaty, M. B. Johnson, A. N. de la Torre, Maliha Ahmad, F. Ayoub, N. Tham, Ismael Castaneda, J. Slim, N. Ekholy, R. J. Malapero, I. B. Herrera
Publikováno v:
Journal of viral hepatitis. 24(12)
Intravenous drug use and sexual practices account for 60% of hepatitis C (HCV) and B (HBV) infection. Disclosing these activities can be embarrassing and reduce risk reporting, blood testing and diagnosis. In diagnosed patients, linkage to care remai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3a4d6dbbb6c74b672be66ef5c6d5467
https://pubmed.ncbi.nlm.nih.gov/28636784
https://pubmed.ncbi.nlm.nih.gov/28636784
Autor:
Qian Zhao, P R Larson, Shyam Surthi, Srivardhan Gowda, Veena Misra, Qiliang Li, Yong Luo, Guru Mathur, M B Johnson
Publikováno v:
Nanotechnology. 16:257-261
Uniform arrays of nano-scale electrolyte-molecule-silicon capacitors have been successfully fabricated. This was done by a combination of reactive ion etch and a selective wet etch through an anodic aluminium oxide mask to form nano-holes in silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81ad69b9cb18014f374da12f51f294fb
https://doi.org/10.1088/0957-4484/16/2/013
https://doi.org/10.1088/0957-4484/16/2/013
Publikováno v:
Cell Death & Differentiation. 8:16-29
IGF-II is a growth factor implicated in human cancers and animal tumor models. While the mitogenic properties of IGF-II are well documented, its ability to suppress apoptosis in vivo has never been proven. We generated independent MMTV-IGF-II transge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f472402c40ccf92e9485438b99bf17b3
https://doi.org/10.1038/sj.cdd.4400762
https://doi.org/10.1038/sj.cdd.4400762
Publikováno v:
Journal of Electronic Materials. 29:368-371
Thickness and etch rate of SiO2 films thermally grown on hexagonal SiC substrates were compared to results obtained from SiO2/Si samples. The data confirm that profilometry and ellipsometry yield the same thickness values for oxides grown on Si and S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69e8a99077a6a98a4e2a3019cbb2c5a0
https://doi.org/10.1007/s11664-000-0079-3
https://doi.org/10.1007/s11664-000-0079-3
Autor:
M. B. Johnson, M. L. O’Steen, X. M. Fang, R. J. Hauenstein, B. N. Strecker, Patrick J. McCann
Publikováno v:
Journal of Electronic Materials. 26:444-448
Crack-free PbSe on (100)-oriented Si has been obtained by a combination of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) techniques. MBE is employed first to grow a PbSe/BaF2/CaF2 buffer structure on the (100)-oriented Si. A 2.5 μm thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81a656a697ce1e2633e88ddc109173c7
https://doi.org/10.1007/s11664-997-0117-5
https://doi.org/10.1007/s11664-997-0117-5
Autor:
M. Pfister, Santos F. Alvarado, M. B. Johnson, F. K. Reinhart, H.W.M. Salemink, U. Marti, F. Morier-Genoud, Denis Martin
Publikováno v:
Applied Surface Science. :516-521
Investigating the ternary InxGa1−xAs alloy (x ∼ 12%) by cross-sectional scanning tunneling microscopy, we find that on the UHV-cleaved (110) surface the In distribution in both the surface and the first subsurface layer can be atomically resolved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adf88a62ce839364b5ed0b7148325f7c
https://doi.org/10.1016/s0169-4332(96)00196-1
https://doi.org/10.1016/s0169-4332(96)00196-1
Publikováno v:
Microelectronic Engineering. 27:31-34
Important features of semiconductor quantum structures can be observed by cross-sectional scanning tunneling microscopy down to the atomic scale. The MBE-grown III-V multilayers are cleaved in UHV to expose an atomically flat cross-sectional plane, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae68f29077a9bbf3fe9d304ef3c6a8c1
https://doi.org/10.1016/0167-9317(94)00049-z
https://doi.org/10.1016/0167-9317(94)00049-z
Publikováno v:
Microelectronic Engineering. 27:539-542
The scanning surface harmonic microscope in which a microwave signal is applied across a tip-sample gap is sensitive to the capacitance/voltage characteristics of semiconductor samples. Its ability to distinguish among a wide range of dopant concentr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94f73bd520e1f1720908c6fe80895299
https://doi.org/10.1016/0167-9317(94)00162-n
https://doi.org/10.1016/0167-9317(94)00162-n