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of 63
pro vyhledávání: '"M Al-Ghazi"'
Autor:
F. Al-Khouja, V. Ramachandran, J. Kuo, A. Macherla, M. Al-Ghazi, F. Dayyani, A. Franklin, Nadine Abi-Jaoudeh, D. Fernando, M. Rupasinghe, K. Ahmed, H. Javan
Publikováno v:
Journal of Vascular and Interventional Radiology. 32:S113
Publikováno v:
International Journal of Quality & Reliability Management, 1993, Vol. 10, Issue 7.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/02656719310043760
Periodical
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Publikováno v:
All Days.
An apparently complete representation of palynozones from D2 through D4B was recorded throughout the studied section. D2 was recognized from interval 1 and is indicative of the occurrence of ?Frasnian-late Eifelian. D3A spanning the Jubah/Jauf format
Publikováno v:
GEO 2010.
Publikováno v:
Medical Physics. 42:3382-3382
Purpose: Flattening Filter Free (FFF) beams offer the potential for higher dose rates, short treatment time, and lower out of field dose. Therefore, the aim of this study was to investigate the dosimetric effects and out of field dose of Volumetric M
Autor:
N Hanna, M Al-Ghazi, S Yu, Nilam Ramsinghani, J Kuo, L Lawrenson, R Wei, Parima Daroui, V Sehgal
Publikováno v:
Medical Physics. 42:3205-3205
Purpose: The aim of this study is to quantify dosimetric effects resulting from variation in pancreatic tumor position assessed by bony anatomy and implanted fiducial markers Methods: Twelve pancreatic cancer patients were retrospectively analyzed fo
Publikováno v:
Medical Physics. 41:321-321
Purpose: Cone beam CT (CBCT) images have been used routinely for patient positioning throughout the treatment course. However, use of CBCT for dose calculation is still investigational. The purpose of this study is to assess the utility of CBCT image
Autor:
Patrick J. Farmer, S McNulty, M Al-Ghazi, D. Brayton, Babbak Shahandeh, Sun Yang, Dazhi Cen, Shirley Gidanian, Frank L. Meyskens
Publikováno v:
Pigment Cell Research. 17:444-445
Publikováno v:
International Journal of Quality & Reliability Management. 10
Introduction The effects of radiation on memory devices is of great concern to manufacturers and users in high-tech industry. With the increase in space and nuclear applications of computer circuitry, such devices are likely to be exposed, circumstan