Zobrazeno 1 - 10
of 33
pro vyhledávání: '"M Al Daas"'
Autor:
I Mattig, T Steudel, E Romero Dorta, G Barzen, D Frumkin, N Laule, M Al-Daas, S Spethmann, K Stangl, F Knebel, S Canaan-Kuehl, K Hahn, A Brand
Publikováno v:
European Heart Journal. 43
Background Infiltrative cardiomyopathies such as cardiac amyloidosis (CA) and Fabry disease (FD) are associated with high cardiovascular morbidity and mortality. Diagnosis is often challenging as CA and FD may present similar cardiac phenotypes on st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bc5b5a37bbe8b4266508420795f6e31
https://doi.org/10.1093/eurheartj/ehac544.035
https://doi.org/10.1093/eurheartj/ehac544.035
Autor:
T Steudel, I Mattig, E Romero Dorta, G Barzen, D Frumkin, N Laule, M Al Daas, S Spethmann, F Knebel, S Canaan-Kuhl, K Stangl, K Hahn, A Brand
Publikováno v:
European Heart Journal. 43
Background Left ventricular (LV) wall thickening is a typical echocardiographic finding in infiltrative cardiomyopathies like cardiac amyloidosis (CA) and Fabry disease (FD). The discrimination of both infiltrative diseases remains challenging by sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60d2a1d1514f1e679366fc168d066eac
https://doi.org/10.1093/eurheartj/ehac544.064
https://doi.org/10.1093/eurheartj/ehac544.064
Publikováno v:
IEEE Transactions on Electron Devices. 41:288-293
The Curtice quadratic, Materka, Statz, and Rodriguez nonlinear models are compared from DC, CV, and RF points of view, to determine which is the most suitable for nonlinear wideband circuit design. For this comparison, GaAs MESFETs of various sizes a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72a79a95273423917651bdaaf17bf2a4
https://doi.org/10.1109/16.275211
https://doi.org/10.1109/16.275211
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 13:1489-1497
A new equation for simulating the bias dependency of the gate-source and gate-drain capacitances of the GaAs MESFET is presented and compared with existing techniques. It provides increased accuracy for microwave circuit design applications and subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d38b332f6ca0f59a29283bd56610ec1d
https://doi.org/10.1109/43.331406
https://doi.org/10.1109/43.331406
Publikováno v:
Scopus-Elsevier
ISCAS
ISCAS
The Curtice quadratic, Materka, Statz and Rodriguez nonlinear models are compared from DC, constant voltage (CV) and RF points of view in order to determine which is most suitable for nonlinear wideband circuit design. For this comparison, a variety
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::797fd85ff2d4f1b200f1e79524e516f0
https://doi.org/10.1109/iscas.1993.692886
https://doi.org/10.1109/iscas.1993.692886
Publikováno v:
IEEE Transactions on Electron Devices. 40:2083-2085
An empirical equation for simulating the bias dependency of the junction capacitances of the GaAs MESFET is presented and compared with existing techniques. It provides increased accuracy over a wide range of silicon and GaAs devices for microwave ci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c90c08d158815d27c043b02d974e9b53
https://doi.org/10.1109/16.239753
https://doi.org/10.1109/16.239753
Akademický článek
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Publikováno v:
IEE Proceedings - Circuits, Devices and Systems. 143:129
Measurements are performed on a variety of GaAs MESFET devices to show that the observed differences between the static and pulsed current/voltage characteristics do not arise entirely from self-heating effects. The results show that a significant re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d116870b8a124e4dcc9423e1a389241
https://doi.org/10.1049/ip-cds:19960178
https://doi.org/10.1049/ip-cds:19960178
Publikováno v:
European Journal of Nuclear Medicine & Molecular Imaging. Sep2021 Supplement 1, Vol. 48, p1-648. 648p.
Akademický článek
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