Zobrazeno 1 - 10
of 171
pro vyhledávání: '"M Achouche"'
Publikováno v:
IEEE Photonics Journal, Vol 2, Iss 3, Pp 460-468 (2010)
While InGaAs absorption material has been used for various applications up to 1.6-μm wavelength, specific designs for low-level detection have become of main interest using high responsivity and low-dark-current detectors. By adding an avalanche mul
Externí odkaz:
https://doaj.org/article/1d7ad0b4e4a64c14b335f2a72bd45cf7
Autor:
M. Achouche, Joris Van Kerrebrouck, Romain Brenot, Xin Yin, Johan Bauwelinck, Bart Moeneclaey, Fabrice Blache, Xing-Zhi Qiu, Gertjan Coudyzer
Publikováno v:
JOURNAL OF LIGHTWAVE TECHNOLOGY
We report a cost-effective 40-Gb/s time-division multiplexing passive optical network downstream link using three-level electrical duobinary modulation. The transmitter consists of a compact electroabsorption-modulated laser module. The receiver cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e91426f2a9531f74c0d018f41b011ab6
https://doi.org/10.1109/jlt.2016.2640558
https://doi.org/10.1109/jlt.2016.2640558
Autor:
G. Figari, M. Achouche
Publikováno v:
Mesure et Évaluation en Éducation, Vol 19, Iss 3 (1997)
Externí odkaz:
https://doaj.org/article/35d47b7288b845b881fdef24c826e4da
Autor:
M Smit, X Leijtens, H Ambrosius, E Bente, J van der Tol, B Smalbrugge, T de Vries, E-J Geluk, J Bolk, R van Veldhoven, L Augustin, P Thijs, D D, Agostino, H Rabbani, K Lawniczuk, S Stopinski, S Tahvili, A Corradi, E Kleijn, D Dzibrou, M Felicetti, E Bitincka, V Moskalenko, J Zhao ,R Santos ,G Gilardi, W Yao,K Williams, P Stabile, P Kuindersma, J Pello, S Bhat, Y Jiao ,D Heiss , G Roelkens , M Wale, P Firth, F Soares, N Grote, M Schell , H Debregeas, M Achouche, J-L Gentner, A Bakker, T Korthorst, et al., M Smit, X Leijtens, H Ambrosius, E Bente, J van der Tol, B Smalbrugge, T de Vries, E-J Geluk, J Bolk, R van Veldhoven, L Augustin, P Thijs, D DAgostino, H Rabbani, K Lawniczuk, S Stopinski, S Tahvili, A Corradi, E Kleijn, D Dzibrou, M Felicetti, E Bitincka, V Moskalenko, J Zhao, R Santos, G Gilardi, W Yao, K Williams, P Stabile, P Kuindersma, J Pello, S Bhat, Y Jiao, D Heiss, G Roelkens, M Wale, P Firth, F Soares, N Grote, M Schell, H Debregeas, M Achouche, J-L Gentner, A Bakker, T Korthorst
Publikováno v:
Semiconductor Science and Technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=erc_________::f609f10ead30b21f9cb7c85c24769929
Autor:
F. Soares, M. F. Baier, Z. Zhang, T. Gaertner, D. Franke, J. Decobert, M. Achouche, D. Schmidt, M. Moehrle, N. Grote, M. Schell
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
Selective area growth (SAG) technology has been added to an established InP monolithic integration platform to fabricate arrays of multi-wavelength distributed feedback (DFB) lasers. The local epitaxy growth rate is controlled by the SiO 2 mask width
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f35f3b140cc7f597321e499a9bf0f3d8
https://doi.org/10.1109/iciprm.2016.7528541
https://doi.org/10.1109/iciprm.2016.7528541
Publikováno v:
IEEE Photonics Journal, Vol 2, Iss 3, Pp 460-468 (2010)
While InGaAs absorption material has been used for various applications up to 1.6-μm wavelength, specific designs for low-level detection have become of main interest using high responsivity and low-dark-current detectors. By adding an avalanche mul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2cffdcdc14e0409e6af074b89ace04a
https://doi.org/10.1109/jphot.2010.2050056
https://doi.org/10.1109/jphot.2010.2050056
Autor:
Gabriel Charlet, Frederic Verluise, Aurelien Boutin, O.B. Pardo, Jean-Yves Dupuy, Jeremie Renaudier, Patrice Tran, Fabrice Blache, M. Achouche, Sebastien Bigo, Haik Mardoyan
Publikováno v:
Journal of Lightwave Technology. 27:153-157
A record capacity distance product of 41.8 Petabit/s middotkm is demonstrated. A total of 164 channels are modulated at 100 Gbit/s with PDM-QPSK format, packed with 2 bit/s/Hz information spectral density and recovered by off-line processing in a coh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4536b9d521d1943ddb97759b90962fad
https://doi.org/10.1109/jlt.2008.2005506
https://doi.org/10.1109/jlt.2008.2005506
Autor:
Sophie Barbet, Paul Kolodner, Francois Brillouet, David T. Neilson, Evans Yifan Chen, Franck Mallecot, H. Gariah, Frederic Pommereau, Lawrence L. Buhl, Douglas M. Gill, F. Perego, R. Farah, F.P. Klemens, A. Gasparyan, Florent Franchin, R. Keller, C. Bolle, Nicolas Chimot, J.-G. Provost, Jeffrey H. Sinsky, H. Debregeas, R. Papazian, Y. Low, R. Frahm, Francois Lelarge, E. Sutter, Flavio Pardo, Mark Cappuzzo, Paola Galli, D.A. Ramsey, N. Lagay, Nagesh R. Basavanhally, V. Guja, D. Palmisano, E. M. Simon, Mark Earnshaw, J.L. Gentner, M. Achouche, D. Lanteri, F. Blanche, G. Glastre, L. Fratta, P. Bernasconi, Olivier Drisse, R. Peruta, Jean Decobert, S. Jovane, T. Salamon, Mahmound Rasras, L.T. Gomez, G. Azzini
Publikováno v:
IEEE Photonics Technology Letters. 24:1657-1659
Compact parallel transmitters and receivers with an aggregate capacity of 107 Gb/s are built through hybrid integration of arrays of ten 100-GHz spaced directly modulated lasers, arrays of ten avalanche photodiodes, and high-index contrast silica arr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::284d8f61e5ee9d74d3b0840bd335c427
https://doi.org/10.1109/lpt.2012.2208948
https://doi.org/10.1109/lpt.2012.2208948
Autor:
S. Bellini, M. Achouche, Francois Lelarge, Christophe Caillaud, D. Carpentier, Romain Brenot, G. Glastre, Olivier Drisse, J-F Paret
Publikováno v:
IEEE Photonics Technology Letters. 24:897-899
We demonstrate the monolithic integration of a buried heterostructure semiconductor optical amplifier (SOA) and a deep ridge PIN photodiode for high-speed on-off keying links at 1.55 μm. The structure allows separate optimization of the SOA and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b135496a3cc289252691930f64ffbfb3
https://doi.org/10.1109/lpt.2012.2190275
https://doi.org/10.1109/lpt.2012.2190275
Autor:
Mourad Chtioui, A. Enard, F. van Dijk, Frederic Pommereau, D. Carpentier, Francois Lelarge, A. Marceaux, M. Achouche
Publikováno v:
IEEE Photonics Technology Letters. 24:318-320
We have developed a high-performance uni-traveling-carrier (UTC) and a modified uni-traveling-carrier (MUTC) photodiode (PD). We report a comparison between the two devices comprising both a 1.5- μm-thick absorption layer followed by a 0.5-μm-thick
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1053fceace1062febe789bc4846f97ea
https://doi.org/10.1109/lpt.2011.2177965
https://doi.org/10.1109/lpt.2011.2177965