Zobrazeno 1 - 10
of 63
pro vyhledávání: '"M A Shakhov"'
Autor:
V S Zakhvalinskii, T B Nikulicheva, E A Pilyuk, E Lähderanta, M A Shakhov, O N Ivanov, E P Kochura, A V Kochura, B A Aronzon
Publikováno v:
Materials Research Express, Vol 7, Iss 1, p 015918 (2020)
Charge carriers parameters on a 2D-layer surface for (Cd _1−x−y Zn _x Mn _y ) _3 As _2 ( y = 0.08) (the concentration ${n}_{2D}$ = 1.9 × 10 ^12 cm ^–2 , the effective value of the 2D-layer ${d}_{2D}={n}_{2D}/{n}_{3D}$ = 14.5 nm, the wave vecto
Externí odkaz:
https://doaj.org/article/a5bff82191434a83b7d463315d81d09c
Autor:
, , N. A. Aganin, ,, M. A. Shakhov, A. A. Burtsev, E. M. Pritotsky, A. P. Pritotskaya, O. Y. Butkovsky
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 19, Iss 1, Pp 33-39 (2019)
Subject of research. We study conditions of fractal crystals growth on the high-temperature material surface under pulsed laser radiation impact. Method. Comprehensive studies were performed on the metal surface morphology after impact of microsecond
Externí odkaz:
https://doaj.org/article/60428c0390f546388bfb72b6002bb5ae
Publikováno v:
Russian Physics Journal. 65:499-506
Autor:
V. I. Kalechits, P. A. Aleksandrov, A. V. Aleksandrova, E. A. Antonov, V. K. Ilyin, I. E. Kovbasyuk, O. Yu. Maslakov, N. A. Usanova, E. S. Khozyasheva, M. N. Shakhov
Publikováno v:
Aerosol Science and Engineering. 6:306-315
Autor:
E. A. Fadeev, M. A. Shakhov, E. Lähderanta, A. N. Taldenkov, A. L. Vasiliev, A. V. Sitnikov, V. V. Rylkov, A. B. Granovsky
Publikováno v:
Journal of Experimental and Theoretical Physics. 133:771-778
Publikováno v:
Journal of Physics: Conference Series. 2192:012033
The article reviews the practical aspects of calibration of airborne particle counters according to GOST R ISO 21501-4 (Russian equivalent of the international ISO 21501-4) standard. The authors share their gained experience and explain what difficul
Publikováno v:
Semiconductors. 52:1616-1620
It is shown that the transport properties of graphitized silicon carbide are controlled by a surface graphene layer heavily doped with electrons. In weak magnetic fields and at low temperatures, a negative magnetoresistance is observed due to weak lo
Autor:
S. Levcenko, E. Hajdeu-Chicarosh, Erkki Lähderanta, Maxim Guc, M. A. Shakhov, K. G. Lisunov, Ernest Arushanov, I. Zakharchuk
Publikováno v:
Solar Energy. 172:184-190
The quaternary chalcogenides, attracting much attention in recent time as promising solar energy materials, permit an effective optimization of their composition by the Ge incorporation. In particular, this implies an interest to the Cu2ZnGeS4 compou
Autor:
A. B. Davydov, M. A. Shakhov, Erkki Lähderanta, O. A. Novodvorskii, B. A. Aronzon, L. N. Oveshnikov, S. F. Marenkin, Alexander L. Vasiliev, Elena I Nekhaeva, A. P. Kuzmenko, A. V. Kochura
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 2457-2465 (2018)
We have studied the properties of relatively thick (about 120 nm) magnetic composite films grown by pulsed laser deposition using the eutectic compound (GaSb)0.59(MnSb)0.41 as target for sputtering. For the studied films we have observed ferromagneti
Autor:
Erkki Lähderanta, K. G. Lisunov, Sergiu Levcenko, Ernest Arushanov, M. A. Shakhov, I. Zakharchuk, Maxim Guc, E. Hajdeu-Chicarosh
Publikováno v:
Journal of Magnetism and Magnetic Materials. 459:246-251
Transport properties of the kesterite-like single crystals of Cu2ZnSnS4, Cu2ZnSnxGe1−xSe4 and Cu2ZnGeS4 are investigated in pulsed magnetic fields up to B = 20 T. The Mott variable-range hopping (VRH) conduction is established by investigations of