Zobrazeno 1 - 10
of 36
pro vyhledávání: '"M A Mintairov"'
Publikováno v:
Technical Physics Letters. 46:332-334
A relationship has been established between the energy gap width of GaInAs p–n homojunctions and the saturation current. For this purpose, a method was suggested and substantiated for determining the energy gap width of a p–n junction from the sp
Publikováno v:
Technical Physics Letters. 45:1100-1102
An anomaly appearing in the photovoltaic characteristics of triple-junction GaInP/GaAs/Ge and of the corresponding double-junction GaInP/GaAs solar cells at ultrahigh concentrations (more than 2000 suns) of incident light has been studied. The light
Autor:
N. A. Kalyuzhnyy, V. V. Evstropov, V. M. Lantratov, S. A. Mintairov, M. A. Mintairov, A. S. Gudovskikh, A. Luque, V. M. Andreev
Publikováno v:
International Journal of Photoenergy, Vol 2014 (2014)
A number of important but little-investigated problems connected with III-V/Ge heterostructure in the GaInP/GaInAs/Ge multijunction solar cells grown by MOVPE are considered in the paper. The opportunity for successfully applying the combination of r
Externí odkaz:
https://doaj.org/article/cbf0c45c75b84d88977dc4ccd7fb5a19
Autor:
Sergey A. Mintairov, R. A. Salii, V. V. Evstropov, M. A. Mintairov, M. Z. Shvarts, Nikolay A. Kalyuzhnyy
Publikováno v:
Semiconductors. 52:1244-1248
Photovoltaic structures on the basis of GaAs p–i–n junctions with a different number of In0.4Ga0.6As layers in the space-charge region forming quantum-confined objects are experimentally and theoretically investigated. For all structures, the dep
Publikováno v:
Journal of Physics: Conference Series. 2103:012192
In the work, the effect of In0.8Ga0.2As quantum dots position in the i-region of a GaAs solar cell on its spectral and photoelectric characteristics has been investigated. Three solar cell structures were obtained by metal-organic vapor-phase epitaxy
The dependence of recombination in GaAs solar cells on the number of included GaInAs quantum objects
Autor:
M. Z. Shvarts, M. A. Mintairov, S. A. Mintairov, N. A. Kalyuzhnyy, V. V. Evstropov, M. V. Nakhimovich
Publikováno v:
Journal of Physics: Conference Series. 1695:012092
The experimental characteristics of GaAs p-i-n structures with InGaAs quantum objects (QOs) have been investigated. The study of electroluminescence spectra has shown that an increase of the number of QOs layers leads to relative increase in electrol
Autor:
Pavel V. Pokrovskiy, S. A. Mintairov, D. A. Malevskiy, V. M. Emelyanov, M. A. Mintairov, R. A. Salii, M. V. Nakhimovich, M. Z. Shvarts, N. A. Kalyuzhnyy
Publikováno v:
Journal of Physics: Conference Series. 1697:012191
The results of studying the InxGa1−xAs laser power converters with the indium percentage of 18% and of 23% are presented. In the mode of 1064 nm laser radiation conversion the photovoltaic parameters dynamics with raising temperature is discussed.
Publikováno v:
Journal of Physics: Conference Series. 1695:012091
The IV characteristics of previously found structure fragment with not optimized isotype hetero-barriers in the bottom connecting part of triple-junction GaInP/GaAs/Ge solar cell has been investigated. It has been shown that there are various ways to
Autor:
S. A. Mintairov, M. A. Mintairov, M. Z. Shvarts, M. V. Nakhimovich, N. A. Kalyuzhnyy, V. V. Evstropov
Publikováno v:
Journal of Physics: Conference Series. 1697:012170
The temperature dependences of the diffusion and recombination saturation currents and the energy gap have been obtained for a GaAs photoelectric converters. Saturation currents by IV characteristic analysis, and the energy gap by electroluminescence
Autor:
N. A. Kalyuzhnyy, S. A. Mintairov, N. Kh. Timoshina, V. V. Evstropov, M. Z. Shvarts, M. A. Mintairov
Publikováno v:
Semiconductors. 50:970-975
The phenomenon of current spreading is essential for concentrator solar cells since it limits the conversion efficiency at high sunlight-concentration ratios. A model, which describes the regularities of the above phenomenon, is proposed and develope