Zobrazeno 1 - 10
of 32
pro vyhledávání: '"M A Ladugin"'
Publikováno v:
Российский технологический журнал, Vol 6, Iss 2, Pp 46-55 (2018)
The compositions of epitaxial layers forming quantum-well heterostructures AlxGayIn1-x-yAs / InP for laser diodes with the radiation wavelength of 1.55 μm are calculated. When carrying out the calculations, the problem was to provide the maximum hei
Externí odkaz:
https://doaj.org/article/984c3559672842b4bb63a444044c0dd1
Autor:
A. D. Maksimov, M. A. Davydkin, T. A. Bagaev, A. Yu. Andreev, I. V. Yarotskaya, M. A. Ladugin, A. A. Marmalyuk
Publikováno v:
Inorganic Materials. 58:425-432
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aff7421a0469b349d48c22cc2827683c
https://doi.org/10.1134/s0020168522040112
https://doi.org/10.1134/s0020168522040112
Autor:
M. A. Ladugin, A. A. Marmalyuk
Publikováno v:
Quantum Electronics. 49:529-534
An approach has been proposed for choosing parameters (width and depth) of an (Al)GaAs/AlGaAs quantum confinement region via calculation of the threshold current density of a semiconductor laser. A detailed assessment of its components has made it po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4541d0c20601fd2769b32bff4404e9a
https://doi.org/10.1070/qel17043
https://doi.org/10.1070/qel17043
Autor:
Nikita A. Pikhtin, M. A. Ladugin, A. A. Marmalyuk, Yu. K. Bobretsova, M. V. Bogdanovich, P. V. Shpak, V. A. Strelets, D. A. Veselov, Sergey O. Slipchenko, N. V. Voronkova
Publikováno v:
Quantum Electronics. 49:488-492
A laser source for bleaching passive Q-switches of erbium-ytterbium lasers is developed and studied. The developed and studied compact pulsed module (peak power exceeding 10 W in a pulse with a duration of 1 μs at a wavelength around 1550 nm) is mad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b912d41cce8bfa3e917f80d22169eff5
https://doi.org/10.1070/qel16956
https://doi.org/10.1070/qel16956
Autor:
A. A. Padalitsa, Aleksandr A Andronov, V. A. Belyakov, A. V. Ikonnikov, M. A. Ladugin, A. G. Fefelov, K. V. Maremianin, V. I. Pozdnjakova, Yu. N. Nozdrin, Aleksandr A Marmalyuk, I. V. Ladenkov
Publikováno v:
Semiconductors. 52:431-435
AbstractNarrow band emissions at 2.6–2.8 THz are observed out of liquid helium cooled 1 mm disk chips prepared of a wafer with the very low n type doped weak barrier GaAs–GaAlAs superlattice of 1000 periods. The emissions are at about 8.0–18.0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1921cc812f59e28ae1a289e231e56fd5
https://doi.org/10.1134/s1063782618040048
https://doi.org/10.1134/s1063782618040048
Autor:
M A Ladugin, A A Marmalyuk, A A Padalitsa, K Yu Telegin, A V Lobintsov, S M Sapozhnikov, A I Danilov, A V Podkopaev, V A Simakov
Publikováno v:
Quantum Electronics. 47:693-695
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb2548b236f7cda87572ebf3b1ba3827
https://doi.org/10.1070/qel16441
https://doi.org/10.1070/qel16441
Autor:
Aleksandr A Andronov, A A Padalitsa, Aleksandr A Marmalyuk, V. A. Belyakov, I. V. Ladenkov, A. G. Fefelov, Yu. N. Nozdrin, M. A. Ladugin, D. I. Zinchenko, E. P. Dodin
Publikováno v:
JETP Letters. 102:207-211
New intraband semiconductor lasers—Wannier–Stark lasers—based on simple GaAs (150 A, quantum well)/GaAlAs (19 A with an aluminum fraction of 12%, barrier) superlattices have been demonstrated. The amplification mechanism in these lasers is base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f32a21a6f8bcdb8d5271d4f0175fc72e
https://doi.org/10.1134/s0021364015160031
https://doi.org/10.1134/s0021364015160031
Autor:
A. A. Marmalyuk, M. A. Surnina, E. G. Gordeev, I. A. Boginskaya, R. Kh. Akchurin, M. A. Ladugin, E. V. Egorova, L. B. Berliner
Publikováno v:
Technical Physics. 59:78-84
The first stage of formation of InAs/GaAs quantum-dot heterostructures by droplet epitaxy is investigated. Factors influencing the geometrical size and density of arrays of indium nanodrops deposited by trimethylindium pyrolysis on the GaAs(100) subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::723e2beb8df661191eb1a79c6495348a
https://doi.org/10.1134/s1063784214010034
https://doi.org/10.1134/s1063784214010034
Autor:
V I Pozdnykova, M. A. Ladugin, A. G. Fefelov, I. V. Ladenkov, A. V. Ikonnikov, Aleksandr A Marmalyuk, A. A. Padalitsa, V. A. Belyakov, K. V. Maremianin, Aleksandr A Andronov, Yu. N. Nozdrin
Publikováno v:
Journal of Physics: Conference Series. 1189:012021
Emissions at 2.6 – 2.8 THz are observed from liquid helium cooled disk chips with metal - superlattice - metal cavities made of two low n type doped wafers with weak barrier GaAs-GaAlAs superlattice of 1000 periods. The emissions are at 8.6 – 18.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad3fa4666550dfbb6a762d931c252530
https://doi.org/10.1088/1742-6596/1189/1/012021
https://doi.org/10.1088/1742-6596/1189/1/012021
Autor:
A. Y. Andreev, T. A. Bagaev, A. V. Lobintsov, S. M. Sapozhnikov, A. A. Marmalyuk, M. A. Ladugin
Publikováno v:
2016 International Conference Laser Optics (LO).
In present paper the device characteristics of the 808 nm laser diodes bars with different waveguides have been compared. It was demonstrated that structures with broad asymmetrical waveguide has higher output power than that with narrow symmetrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::016ebd4ca470d975ccbc478425e31680
https://doi.org/10.1109/lo.2016.7549741
https://doi.org/10.1109/lo.2016.7549741