Zobrazeno 1 - 10
of 38
pro vyhledávání: '"M A G Silveira"'
Autor:
Roberto Linares, H.C. Santos, W. A. Seale, Roberto Vicençotto Ribas, M. A. G. Silveira, D.L. Touffen, C.C. Seabra, J. R. B. Oliveira, Nilberto H. Medina, L. Sigaud, E. W. Cybulska, P. R. P. Allegro
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 413:1-5
In this paper new experimental data are presented for the stopping power of Ti, V and Cr ions in Ge and Au, in the 150–500 keV/u energy range. The heavy ions at low energies are produced from the elastic scattering between particles of an energetic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9b27a50cc4f928ebfee49c0131c3257
https://doi.org/10.1016/j.nimb.2017.09.030
https://doi.org/10.1016/j.nimb.2017.09.030
Autor:
M. A. G. Silveira, Nilberto H. Medina, Salvador Pinillos Gimenez, Nemitala Added, V. A. P. Aguiar, L. E. Seixas
Publikováno v:
Biblioteca Digital de Teses e Dissertações da FEI
Centro Universitário da Fundação Educacional Inaciana (FEI)
instacron:FEI
Centro Universitário da Fundação Educacional Inaciana (FEI)
instacron:FEI
This paper shows a comparison between two different MOSFET structures: a conventional layout (CM) and Diamond (DM - enclosed layout transistor), as tolerance to the Single Event effect - SEE. Both CMOS 0.35μm technology devices types have the same g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c20a4a25515e1cace2007ea1e04fa23
https://doi.org/10.4028/www.scientific.net/amr.1083.197
https://doi.org/10.4028/www.scientific.net/amr.1083.197
Autor:
S. G. Nascimento, Nemitala Added, Eduardo Luiz Augusto Macchione, A. R. Leite, Y. A. P Aguiar, M. A. G. Silveira, Nilberto H. Medina
Publikováno v:
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
The new setup for Single Event Effects studies at LAFN-USP, Brazil is described in this work. The new beam line is dedicated to production of large area, high uniformity and low intensity heavy-ions beams to irradiate electronic devices. Its design r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9c144946a562fa9a2d30332ce2fc4d4
https://doi.org/10.1109/radecs.2017.8696206
https://doi.org/10.1109/radecs.2017.8696206
Publikováno v:
2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro).
The PIN sensor array in two technologies (bulk and SOI) is studied here, based on fabricated lateral PIN. Experimental data in non-radiation environment is used to adjust the models implemented in the numerical simulator that are latter used to evalu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e8bb63712050c91efe61c44cacaad81
https://doi.org/10.1109/sbmicro.2017.8113003
https://doi.org/10.1109/sbmicro.2017.8113003
Autor:
R Menegasso, Nemitala Added, V. A. P. Aguiar, M. A. G. Silveira, Nilberto H. Medina, Eduardo Luiz Augusto Macchione, S G Alberton
Publikováno v:
Biblioteca Digital de Teses e Dissertações da FEI
Centro Universitário da Fundação Educacional Inaciana (FEI)
instacron:FEI
Centro Universitário da Fundação Educacional Inaciana (FEI)
instacron:FEI
MOSFETs are subject to different types of Single-Event Effects (SEEs) induced by heavy ions, with low-voltage MOSFETs being more susceptible to non-destructive effects, such as Single-Event Transients, than high-voltage MOSFETs which may also be susc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8368f0965424bd31473b7be0a0e19e1a
https://doi.org/10.1088/1742-6596/1291/1/012045
https://doi.org/10.1088/1742-6596/1291/1/012045
Publikováno v:
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro).
This paper analyses lateral PIN diodes fabricated in the IBM 0.13 technology, intended to be used in a photodetector pixel structure in future developments. Experimental electrical characterization is used to adjust numerical simulation's models that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a092a1b82456e148c9a486598ff33d7
https://doi.org/10.1109/sbmicro.2016.7731365
https://doi.org/10.1109/sbmicro.2016.7731365
Publikováno v:
Anais do 11. Congresso Brasileiro de Inteligência Computacional.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c96d08f977fa9ec481a8f440ff524a8b
https://doi.org/10.21528/cbic2013-035
https://doi.org/10.21528/cbic2013-035
Publikováno v:
Anais do 11. Congresso Brasileiro de Inteligência Computacional.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15975333019c5f9ada9288f94d9665a1
https://doi.org/10.21528/cbic2013-062
https://doi.org/10.21528/cbic2013-062
Publikováno v:
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
This paper studies gated PIN diodes designed at Centro Universitario da FEI and fabricated at Global Foundries in the GF0.13 technology, using SiGe substrate and four gate setups. The analysis is made through experimental measurements and numerical s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c957e397dd1439beb682abcba8cedd87
https://doi.org/10.1109/ulis.2016.7440084
https://doi.org/10.1109/ulis.2016.7440084
Autor:
Fernando Aguirre, K. H. Cirne, Nemitala Added, Nicolas E. Araujo, M. A. A. Melo, Nilberto H. Medina, R. B. B. Santos, M. A. G. Silveira, Felipe G. H. Leite, V. A. P. Aguiar, A. Rallo, Eduardo Luiz Augusto Macchione
Publikováno v:
AIP Conference Proceedings.
Electronic devices exposed to ionizing radiation exhibit degradation on their electrical characteristics, which may compromise the functionality of the device. Understanding the physical phenomena responsible for radiation damage, which may be specif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5a64c1110602eb760004a63526c2115
https://doi.org/10.1063/1.4955374
https://doi.org/10.1063/1.4955374