Zobrazeno 1 - 10
of 51
pro vyhledávání: '"M A, Reuter"'
Publikováno v:
Materials Processing Fundamentals 2023 ISBN: 9783031226564
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4301cd35cb06801c5e9b0c6172ad5ff2
https://doi.org/10.1007/978-3-031-22657-1_13
https://doi.org/10.1007/978-3-031-22657-1_13
Autor:
R Chandra, L Abrishamian, M Bonten, P Fustier, K Gedif, S Goncalves, A Igbinadolor, J Kingsley, C Knutson, N Kumarasamy, P Legenne, M Mekebeb-Reuter, K Ramanathan, E Reshetnyak, J Rosa, M Soergel, D Solai Elango, V Stavropoulou, N Stojcheva, M Stumpp, A Tietz
Publikováno v:
10.01 - Respiratory infections and bronchiectasis.
Autor:
A. J. Gross, B Heimbach, M Heupel-Reuter, Bernd Wullich, Konrad Wilhelm, D Dürschmied, C Gratzke, Arkadiusz Miernik, D.S. Schoeb
Publikováno v:
Der Urologe. 58:1029-1038
Der demographische Wandel und die daraus resultierende Zunahme hochbetagter Patienten in der urologischen Praxis stellt eine Herausforderung an die Neukonzeption von Leitlinien und klinischen Studien dar. Wahrend in der inneren Medizin mit der Fachri
Autor:
M. A. Reuter
Publikováno v:
Chemie Ingenieur Technik. 92:1166-1167
Autor:
D S, Schoeb, B, Wullich, D, Dürschmied, B, Heimbach, M, Heupel-Reuter, A J, Gross, K, Wilhelm, C, Gratzke, A, Miernik
Publikováno v:
Der Urologe. Ausg. A. 58(9)
The demographic developments of western society and the resulting increase in the number of very old patients in urology represents a challenge for the design of clinical studies and, consequently, recommendations of guidelines. While in internal med
Publikováno v:
Journal of Crystal Growth. 173:393-401
High-temperature epitaxy of PtSi/Si(0 0 1) interfaces has been investigated by ultra-high-vacuum transmission electron microscopy for deposition temperatures up to 850°C. At 600°C continuous, polycrystalline, epitaxial films are observed with recta
Publikováno v:
Applied Physics Letters. 85:458-460
We report medium energy ion scattering results that determine the extent of Hf incorporation in the interfacial region of HfO2∕Si(001) films. The lack of change in the Hf backscatter peak after interlayer growth by in situ oxidation indicates extre
Autor:
M. Copel, M. C. Reuter
Publikováno v:
Applied Physics Letters. 83:3398-3400
Growth of HfO2 by Hf deposition in an oxidizing ambient is found to cause removal of interfacial SiO2. Medium-energy ion scattering results show that the reaction takes place during growth, and involves transport of oxygen through the HfO2 layer. An
Autor:
M M, STIMSON, M A, REUTER
Publikováno v:
Journal of the American Chemical Society. 68
Autor:
M M, STIMSON, M A, REUTER
Publikováno v:
Journal of the American Chemical Society. 67