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Conductance switching at the nanoscale of diarylethene derivatives self-assembled monolayers on La$_{0.7}$Sr$_{0.3}$MnO$_3$

Autor: Thomas, L., Guerin, D., Quinard, B., Jacquet, E., Mattana, R., Seneor, P., Vuillaume, D., Melin, T., Lenfant, S.

We report on the phosphonic acid route for the grafting of functional molecules, optical switch (dithienylethene diphosphonic acid, DDA), on La0.7Sr0.3MnO3 (LSMO). Compact self-assembled monolayers (SAMs) of DDA are formed on LSMO as studied by topog

Externí odkaz: http://arxiv.org/abs/2003.09622

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Physical Study by Surface Characterizations of Sarin Sensor on the Basis of Chemically Functionalized Silicon Nanoribbon Field Effect Transistor

Autor: Smaali, K., Guerin, D., Passi, V., Ordronneau, L., Carella, A., Melin, T., Dubois, E., Vuillaume, D., Simonato, J. P., Lenfant, S.

Publikováno v: J. Phys. Chem. C 120, 11180-11191 (2016)

Surface characterizations of an organophosphorus (OP) gas detector based on chemically functionalized silicon nanoribbon field-effect transistor (SiNR-FET) were performed by Kelvin Probe Force Microscopy (KPFM) and ToF-SIMS, and correlated with chang

Externí odkaz: http://arxiv.org/abs/1605.07137

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Characterization of ion/electron beam induced deposition of electrical contacts at the sub-{\mu}m scale

Autor: Brunel, D., Troadec, D., Hourlier, D., Deresmes, D., Zdrojek, M, Mélin, T.

Publikováno v: Microelectronic Engineering 88 (2011) 1569--1572

We investigate the fabrication of electrical contacts using ion- and electron-beam induced deposition of platinum at the sub-\mu m scale. Halos associated with the metal surface decoration are characterized electrically in the 0.05-2 \mu m range usin

Externí odkaz: http://arxiv.org/abs/1103.1975

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Dispersive charge transport along the surface of an insulating layer observed by Electrostatic Force Microscopy

Autor: Lambert, J. S., De Loubens, G., Guthmann, C., Saint-Jean, M., Melin, T.

We report the observation in the direct space of the transport of a few thousand charges submitted to a tunable electric field along the surface of a silicon oxide layer. Charges are both deposited and observed using the same Electrostatic Force Micr

Externí odkaz: http://arxiv.org/abs/cond-mat/0312471

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Fermi-Edge Singularities in AlxGa1-xAs Quantum Wells : Extrinsic Versus Many-Body Scattering Processes

Autor: Melin, T., Laruelle, F.

A Fano resonance mechanism is evidenced to control the formation of optical Fermi-edge singularities in multi-subband systems such as remotely doped AlxGa1-xAs heterostructures. Using Fano parameters, we probe the physical nature of the interaction b

Externí odkaz: http://arxiv.org/abs/cond-mat/0006471

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