Zobrazeno 1 - 10
of 142
pro vyhledávání: '"Máximo López López"'
Publikováno v:
Momento, Vol 0, Iss 48, Pp 34-46 (2014)
InN layers were prepared by magnetron sputtering, in a mixed atmosphere of argon and nitrogen on Si substrates (100), Si (111), and glass. The substrate temperature Ts was varied (300-500 oC) in order to correlate it with the optical, structural, and
Externí odkaz:
https://doaj.org/article/19384cc7220e459ba4e95b7cd8eab5ae
Publikováno v:
Momento, Vol 0, Iss 45, Pp 34-43 (2012)
GaPN thin films were deposited on Silicon (100) substrates, in the range of 420-520 oC by r-f magnetron sputtering employing a nitrogen–argon atmosphere. According to X-ray measurements the GaPN films are polycrystalline with preferential orientati
Externí odkaz:
https://doaj.org/article/cdd5b7e4319046adb99dcadff492dcff
Autor:
A. Pulzara-Mora, Camilo Pulzara-Mora, Miguel Venegas de la Cerda, S. Gallardo-Hernández, Roberto Bernal-Correa, Máximo López-López, Santiago Torres-Jaramillo
Publikováno v:
Universitas Scientiarum, Vol 24, Iss 3, Pp 523-542 (2019)
Currently, the obtention of nano-structures based on III-V materials is expensive. This calls for novel and inexpensive nanostructure manufacturing approaches. In this work we report on the manufacture of a nanostructures consisting of alternating la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54a23ec8626b22a76de33b4d0b67ac62
https://revistas.javeriana.edu.co/index.php/scientarium/article/view/22998
https://revistas.javeriana.edu.co/index.php/scientarium/article/view/22998
Autor:
C.F. Sánchez-Valdés, A. Del Río-De Santiago, J.L. Sánchez Llamazares, Víctor Hugo Méndez-García, E. Cruz-Hernández, M. A. Vidal, Máximo López-López
Publikováno v:
Journal of Magnetism and Magnetic Materials. 475:715-720
We report the influence of the Mn atomic concentration (at.%) on the nanostructures formation and magnetic properties of GaAs:Mn layers grown by Molecular Beam Epitaxy at a relatively high substrate temperature of 530 °C varying the nominal Mn at.%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f959ce51d30b81079ed09e6b6025fe3f
https://doi.org/10.1016/j.jmmm.2018.12.030
https://doi.org/10.1016/j.jmmm.2018.12.030
Autor:
Máximo López-López, Yuri Kudriatsev, Y. L. Casallas-Moreno, Victor-Tapio Rangel-Kuoppa, Mario Alberto Zambrano-Serrano, Yaoqiao Hu, S. Gallardo-Hernández, C.A. Hernández-Gutiérrez, Dagoberto Cardona
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-7 (2020)
Scientific Reports
Scientific Reports
We have studied the Mg doping of cubic GaN grown by plasma-assisted Molecular Beam Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions to obtain heavy p-type doping to achieve low resistance films which can be us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa725ab11e6532e02245b6a8cc1e8627
https://doi.org/10.1038/s41598-020-73872-w
https://doi.org/10.1038/s41598-020-73872-w
Autor:
Heberto Gómez-Pozos, Y. L. Casallas-Moreno, Máximo López-López, Arturo Ponce, C.A. Hernández-Gutiérrez, Eduardo Ortega, S. Gallardo-Hernández, Dagoberto Cardona, G. Contreras-Puente, L.A. Hernández-Hernández
Publikováno v:
Thin Solid Films. 647:64-69
Metastable cubic InN is a promising semiconductor for developing optoelectronic, photovoltaic and electronic devices. The suitable application of the material requires a high crystalline quality and a high cubic phase purity. For this reason, it is i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::604a15deeae5adf45128fe36b29fb608
https://doi.org/10.1016/j.tsf.2017.12.012
https://doi.org/10.1016/j.tsf.2017.12.012
Autor:
A. Del Río-De Santiago, I.E. Cortes-Mestizo, A.Yu. Gorbatchev, Máximo López-López, L.I. Espinosa-Vega, C.A. Mercado-Ornelas, Víctor Hugo Méndez-García, E. Eugenio-López
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 95:22-26
Different mechanisms of adatoms nucleation are studied for the self-assembling of InAs quantum dots (QDs) on smooth and nanoscale faceted GaAs surface morphologies. The experiments were performed on GaAs(100) and GaAs(631), and prior to the arrival o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55ffb03eafb7816611b3636aaabd01a3
https://doi.org/10.1016/j.physe.2017.08.013
https://doi.org/10.1016/j.physe.2017.08.013
Autor:
Mario Alberto Zambrano-Serrano, Y. L. Casallas-Moreno, Ángel Guillén-Cervantes, Briseida Guadalupe Pérez-Hernández, Máximo López-López, S. Gallardo-Hernández
Publikováno v:
Applied Physics Express. 14:085507
Self-assembling of nanovoids with a precisely controlled depth at the GaN/GaAs interface is reported and their formation mechanism discussed. During the very early stages of GaN growth by molecular beam epitaxy over GaAs(100) misoriented substrates,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01d1eb5ea9bce8994b7420b4c0c7a0ac
https://doi.org/10.35848/1882-0786/ac15bd
https://doi.org/10.35848/1882-0786/ac15bd
Autor:
Alvaro Pulzara Mora, Máximo López López, Jhon Jairo Prías Barragán, Diego Javier Sánchez Trujillo, Hernando Ariza Calderón
Publikováno v:
Superficies y Vacío. 30:56-60
GaAs buffer layer in InAs/GaAs quantum dots (QDs) was investigated by Photoreflectance (PR) technique at 300 K. PR spectra obtained were compared with commercial GaAs sample PR spectra, and they were analyzed by using the derivative Lorentzian functi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2294eac0ab187476af35023d0eac60f9
https://doi.org/10.47566/2017_syv30_1-040056
https://doi.org/10.47566/2017_syv30_1-040056