Zobrazeno 1 - 10
of 145
pro vyhledávání: '"M, YOGANATHAN"'
Autor:
V. Welch, M. Doull, M. Yoganathan, J. Jull, M. Boscoe, S. E. Coen, Z. Marshall, J. Pardo Pardo, A. Pederson, J. Petkovic, L. Puil, L. Quinlan, B. Shea, T. Rader, V. Runnels, S. Tudiver
Publikováno v:
Research Integrity and Peer Review, Vol 2, Iss 1, Pp 1-11 (2017)
Abstract Background Accurate reporting on sex and gender in health research is integral to ensuring that health interventions are safe and effective. In Canada and internationally, governments, research organizations, journal editors, and health agen
Externí odkaz:
https://doaj.org/article/61a653a7c2e648fba0e27ff6fb0ae1d3
Publikováno v:
Campbell Systematic Reviews, Vol 12, Iss 1, Pp 1-14 (2016)
Externí odkaz:
https://doaj.org/article/d4d67abab55e4c8b888b5ed52b7889ff
Publikováno v:
Journal of Materials Research. 14:1171-1174
SiC (3C-SiC) was grown on the top Si layer of SIMOX (Si/SiO2/Si) by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on the SiC by metalorganic (MO) CVD to produce a GaN/SiC/Si/SiO2/Si multilayer structure. T
Autor:
A.C. Greenwald, M. Yoganathan, R. Sudharsanan, G. Vakerlis, H.S. Cho, M. S. Dixit, J. Dubeau, J. Kadyk
Publikováno v:
IEEE Transactions on Nuclear Science. 45:285-289
Microstrip gas chambers (MSGCs) require substrates with sheet resistance in the range of 10/sup 13/-10/sup 16/ ohms/square to eliminate polarization and surface charging effects between the electrodes. Thin films of II-VI semiconductors deposited on
Publikováno v:
2013 International Conference on Communication and Signal Processing.
In this paper, a co-axial fed double L-shaped slotted micro-strip patch antenna array is proposed for multi-band operation satisfying WLAN (Wireless Local Area Network) and WiMAX (Worldwide interoperability for Microwave Access) application. A single
Autor:
Robert P. Devaty, Wolfgang J. Choyke, J. Devrajan, M. Yoganathan, Andrew J. Steckl, S. W. Novak
Publikováno v:
Journal of Electronic Materials. 25:869-873
The effect of post-implantation anneal on erbium-doped 6H-SiC has been investigated. 6H-SiC has been implanted with 330 keV Er+ at a dose of 1 × 1013 /cm2. Er depth profiles were obtained by secondary ion mass spectrometry (SIMS). The as-implanted E
Publikováno v:
Journal of Applied Crystallography. 27:497-503
The development of epitaxic and bulk-grown semiconductor SiC exhibiting uniform polytype phase homogeneity is critically dependent upon the accurate identification of crystallographic orientations corresponding to the desired polytype. In this paper,
Autor:
M. Yoganathan, L. L. Clemen, Robert P. Devaty, Ch. Hässler, Wolfgang J. Choyke, Gerhard Pensl
Publikováno v:
Applied Physics Letters. 65:1668-1670
We have observed intense line spectra in the neighborhood of 1.54 μm from erbium‐implanted samples of 4H, 6H, 15R, and 3C SiC. Samples were implanted to a fluence of about 1013 erbium ions/cm2 using four implant energies. An anneal at 1700 °C in
Autor:
J. A. Edmond, Benjamin Segall, J. A. Powell, Robert P. Devaty, M. Yoganathan, Mebarek Alouani, Walter R. L. Lambrecht, W. Suttrop, Wolfgang J. Choyke
Publikováno v:
Applied Physics Letters. 63:2747-2749
Experimental and theoretical optical reflectivity in the range 4–10 eV are reported for the 3C and 4H polytypes of SiC. The calculations used the linear muffin‐tin orbital method and the local density approximation. Good agreement in peak positio
Autor:
David J. Larkin, H. S. Kong, John A. Edmond, Robert P. Devaty, J. A. Powell, Wolfgang J. Choyke, M. Yoganathan, L. L. Clemen, Mike F. MacMillan
Publikováno v:
Applied Physics Letters. 62:2953-2955
Evidence is presented for a four particle acceptor complex in 3C, 6H, and 4H SiC, obtained in low-temperature photoluminescence and cathodoluminescence experiments. The new lines were observed in p-type films lightly doped with aluminum, of 6H, 4H, a