Zobrazeno 1 - 10
of 96
pro vyhledávání: '"M, Vaqueiro"'
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
Light-induced degradation (LID) occurring on mainstream boron-doped silicon solar cells has been investigated for decades. Its relationship with boron and oxygen concentrations in crystalline silicon has made it widely accepted to be the cause of suc
Autor:
M. Vaqueiro-Contreras, Joyce Ann T. De Guzman, Vladimir P. Markevich, José Coutinho, Matthew P. Halsall, Stanislau B. Lastovskii, L.I. Murin, Anthony R. Peaker, I. D. Hawkins, Paulo Santos, Iain F. Crowe
Publikováno v:
Markevich, V, Vaqueiro Contreras, M, De Guzman, J A, Coutinho, J, Santos, P, Crowe, I, Halsall, M, Hawkins, I, Lastovskii, S B, Murin, L I & Peaker, A 2019, ' Boron-Oxygen Complex Responsible for Light Induced Degradation in Silicon Photovoltaic Cells: a New Insight into the Problem ', Physica Status Solidi. A: Applied Research . https://doi.org/10.1002/pssa.201900315
Results available in the literature on minority carrier trapping and light induced degradation (LID) effects in silicon materials containing boron and oxygen atoms are briefly reviewed. Special attention is paid to the phenomena associated with “de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::57f38a525b47f6a3fe75db578ad6502a
https://www.research.manchester.ac.uk/portal/en/publications/boronoxygen-complex-responsible-for-light-induced-degradation-in-silicon-photovoltaic-cells-a-new-insight-into-the-problem(b128a03a-724b-4cb9-a859-5e7fd1fdab6e).html
https://www.research.manchester.ac.uk/portal/en/publications/boronoxygen-complex-responsible-for-light-induced-degradation-in-silicon-photovoltaic-cells-a-new-insight-into-the-problem(b128a03a-724b-4cb9-a859-5e7fd1fdab6e).html
Autor:
L.I. Murin, José Coutinho, I. D. Hawkins, Stanislau B. Lastovskii, Matthew P. Halsall, Iain F. Crowe, Paulo Santos, Vladimir P. Markevich, Anthony R. Peaker, M. Vaqueiro-Contreras
Publikováno v:
Vaqueiro Contreras, M, Markevich, V, Coutinho, J, Santos, P, Crowe, I, Halsall, M, Hawkins, I, Lastovskii, S B, Murin, L I & Peaker, A 2019, ' Identification of the mechanism responsible for the Boron Oxygen Light Induced Degradation in Silicon Photovoltaic Cells ', Journal of Applied Physics . https://doi.org/10.1063/1.5091759
Silicon solar cells containing boron and oxygen are one of the most rapidly growing forms of electricity generation. However, they suffer from significant degradation during the initial stages of use. This problem has been studied for 40 years result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13fb37e430265ccab9c8adce5f89bb67
https://www.research.manchester.ac.uk/portal/en/publications/identification-of-the-mechanism-responsible-for-the-boron-oxygen-light-induced-degradation-in-silicon-photovoltaic-cells(ead62cbd-46ac-4e0e-9b4d-d126d33d4197).html
https://www.research.manchester.ac.uk/portal/en/publications/identification-of-the-mechanism-responsible-for-the-boron-oxygen-light-induced-degradation-in-silicon-photovoltaic-cells(ead62cbd-46ac-4e0e-9b4d-d126d33d4197).html
Akademický článek
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Autor:
Jarosław Jabłoński, M. Vaqueiro-Contreras, Anthony R. Peaker, Jack Mullins, Vladimir P. Markevich, John D. Murphy, Leif Jensen, Matthew P. Halsall, Nicholas E. Grant
Publikováno v:
Mullins, J, Markevich, V P, Vaqueiro-contreras, M, Grant, N E, Jensen, L, Jabłoński, J, Murphy, J D, Halsall, M P & Peaker, A R 2018, ' Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states ', Journal of Applied Physics, vol. 124, no. 3, pp. 035701 . https://doi.org/10.1063/1.5036718
Float zone silicon (FZ-Si) is typically assumed to be an extremely high quality material, with high minority carrier lifetimes and low concentrations of recombination active defects. However, minority carrier lifetime in FZ-Si has previously been sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10ed6f6b6e8da5e6f9d6a322ff488a03
Akademický článek
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Akademický článek
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Publikováno v:
Environmental Earth Sciences. 73:2997-3010
Runoff flows not only on magmatic rocks massifs surface but also through their internal discontinuities, which define the secondary permeability of the rock. The effects, especially erosive, of the water movement on surface are well known although it
Autor:
M. Vaqueiro Contreras, Jack Mullins, Bruce Hamilton, Vladimir P. Markevich, Jeff Binns, L.I. Murin, Matthew P. Halsall, E.A. Good, C. L. Reynolds, J. Medford, Anthony R. Peaker, Robert J. Falster, João A. P. Coutinho
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
Hydrogen is often present in silicon solar cell fabrication introduced, for example, from silicon nitride anti-reflection layers. In general this has an important beneficial effect in reducing surface recombination. In this paper we show that in n-ty
Autor:
Jack Mullins, L.I. Murin, Anthony R. Peaker, João A. P. Coutinho, M. Vaqueiro-Contreras, Vladimir P. Markevich, Matthew P. Halsall, Robert Falster, Jeff Binns
Publikováno v:
Vaqueiro Contreras, M, Markevich, V, Mullins, J, Halsall, M, Murin, L I, Falster, R, Binns, J, Coutinho, J & Peaker, A 2018, ' Lifetime degradation of n-type Czochralski silicon after hydrogenation ', Journal of Applied Physics, vol. 123, 161415 . https://doi.org/10.1063/1.5011351
Hydrogen plays an important role in the passivation of interface states in silicon-based metal-oxide semiconductor technologies and passivation of surface and interface states in solar silicon. We have shown recently [Vaqueiro-Contreras et al., Phys.