Charge Collection in SOI Microdosimeters and Their Radiation Hardness

Autor: V. A. Pan, L. T. Tran, Z. Pastuovic, D. Hill, J. Williams, A. Kok, M. Povoli, A. Pogossov, S. Peracchi, D. Boardman, J. Davis, S. Guatelli, M. Petasecca, M. L. F. Lerch, A. B. Rosenfeld

Publikováno v: IEEE Transactions on Nuclear Science. 70:568-574

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::284bf421fd9ddf7900da0e1e7171296d
https://doi.org/10.1109/tns.2023.3242267

Neutron irradiation of Hydrogenated Amorphous Silicon p-i-n diodes and charge selective contacts detectors

Autor: M. Menichelli, M. Bizzarri, M. Boscardin, L. Calcagnile, M. Caprai, A.P. Caricato, G.A.P. Cirrone, M. Crivellari, I. Cupparo, G. Cuttone, S. Dunand, L. Fanò, B. Gianfelici, O. Hammad, M. Ionica, K. Kanxheri, M. Large, G. Maruccio, A.G. Monteduro, F. Moscatelli, A. Morozzi, A. Papi, D. Passeri, M. Pedio, M. Petasecca, G. Petringa, F. Peverini, G. Quarta, S. Rizzato, A. Rossi, G. Rossi, A. Scorzoni, L. Servoli, C. Talamonti, G. Verzellesi, N. Wyrsch

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::168065cb173ab04642e275eb3fe046a9
https://hdl.handle.net/11391/1549777

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Testing of planar hydrogenated amorphous silicon sensors with charge selective contacts for the construction of 3D-detectors

Autor: M. Menichelli, M. Bizzarri, M. Boscardin, M. Caprai, A.P. Caricato, G.A.P. Cirrone, M. Crivellari, I. Cupparo, G. Cuttone, S. Dunand, L. Fanò, O. Hammad, M. Ionica, K. Kanxheri, M. Large, G. Maruccio, A.G. Monteduro, A. Morozzi, F. Moscatelli, A. Papi, D. Passeri, M. Petasecca, G. Petringa, G. Quarta, S. Rizzato, A. Rossi, G. Rossi, A. Scorzoni, L. Servoli, C. Talamonti, G. Verzellesi, N. Wyrsch

Publikováno v: Journal of instrumentation 17 (2022). doi:10.1088/1748-0221/17/03/C03033
info:cnr-pdr/source/autori:Menichelli, M.; Bizzarri, M.; Boscardin, M.; Caprai, M.; Caricato, A. P.; Cirrone, G. A.P.; Crivellari, M.; Cupparo, I.; Cuttone, G.; Dunand, S.; Fanò, L.; Hammad, O.; Ionica, M.; Kanxheri, K.; Large, M.; Maruccio, G.; Monteduro, A. G.; Morozzi, A.; Moscatelli, F.; Papi, A.; Passeri, D.; Petasecca, M.; Petringa, G.; Quarta, G.; Rizzato, S.; Rossi, A.; Rossi, G.; Scorzoni, A.; Servoli, L.; Talamonti, C.; Verzellesi, G.; Wyrsch, N./titolo:Testing of planar hydrogenated amorphous silicon sensors with charge selective contacts for the construction of 3D-detectors/doi:10.1088%2F1748-0221%2F17%2F03%2FC03033/rivista:Journal of instrumentation/anno:2022/pagina_da:/pagina_a:/intervallo_pagine:/volume:17

Hydrogenated Amorphous Silicon (a-Si:H) is a material well known for its intrinsic radiation hardness and is primarily utilized in solar cells as well as for particle detection and dosimetry. Planar p-i-n diode detectors are fabricated entirely by me

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bfceddc3a578543d7aefe44e3cdfc145
https://publications.cnr.it/doc/467347