Zobrazeno 1 - 10
of 184
pro vyhledávání: '"M, Mantelli"'
Autor:
Arnaud Regnier, Abderrezak Marzaki, Philippe Lorenzini, Franck Julien, Hassen Aziza, P. Devoge, Sebastien Haendler, Alexandre Malherbe, M. Mantelli, Julien Delalleau, Stephan Niel, T. Cabout
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, 2021, 126, pp.114265. ⟨10.1016/j.microrel.2021.114265⟩
Microelectronics Reliability, Elsevier, 2021, 126, pp.114265. ⟨10.1016/j.microrel.2021.114265⟩
Microelectronics Reliability, 2021, 126, pp.114265. ⟨10.1016/j.microrel.2021.114265⟩
Microelectronics Reliability, Elsevier, 2021, 126, pp.114265. ⟨10.1016/j.microrel.2021.114265⟩
A new transistor architecture is developed by reusing already existing fabrication process bricks in an embedded non-volatile memory (eNVM) sub-40 nm CMOS technology, resulting in a middle-voltage zero-cost transistor, ideal for low-cost products. TC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ceb38e2dc7a527bff3df32e12cda2df
https://hal.science/hal-03500203
https://hal.science/hal-03500203
Autor:
Frederique Trenteseaux, Francesco La Rosa, Vincenzo Della Marca, Franck Melul, Arnaud Regnier, Marjorie Hesse, Madjid Akbal, Stephan Niel, Pierre Laine, Marc Bocquet, M. Mantelli
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, 2021, 126, pp.114266. ⟨10.1016/j.microrel.2021.114266⟩
Microelectronics Reliability, 2021, 126, pp.114266. ⟨10.1016/j.microrel.2021.114266⟩
International audience; In this paper, we present an experimental study of a new architecture of the embedded Select in Trench Memory (eSTM™) cell. A first part is dedicated to a deep analysis of the overlap eSTM TM behaviour. A key fact is the pos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b3b5d2f5593cfd412f8954a43bb3d15
https://hal.science/hal-03596892/document
https://hal.science/hal-03596892/document
Autor:
M. Mantelli, B. Roques, T. Blanchard, M. Mounier, M. quincey, F. Jplovet, N. Jousseran, A. Marchand, A. Diquélou, B. Reynolds, C. Trumel, H. Lefebvre, D. Concordet, R. Lavoué
Publikováno v:
Revue Vétérinaire Clinique. 57:43-44
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd8909afc8dbf37c1cf6a2ba020b293a
https://doi.org/10.1016/j.anicom.2022.01.002
https://doi.org/10.1016/j.anicom.2022.01.002
Autor:
Arnaud Regnier, Stephan Niel, Alexandre Malherbe, Abderrezak Marzaki, Sebastien Haendler, Hassen Aziza, Franck Julien, Thomas Sardin, M. Mantelli, Philippe Lorenzini, Paul Devoge
Publikováno v:
2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)
2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), Jun 2021, Montpellier, France. pp.1-5, ⟨10.1109/DTIS53253.2021.9505137⟩
DTIS
2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), Jun 2021, Montpellier, France. pp.1-5, ⟨10.1109/DTIS53253.2021.9505137⟩
DTIS
International audience; This work presents a new transistor architecture developed by reusing already existing fabrication process steps in an embedded non-volatile memory (eNVM) CMOS technology. The proposed transistor is derived from an existing hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::906c65c22204cffd14cbbb4c054149ab
https://hal.archives-ouvertes.fr/hal-03502361/file/dtis21-22.pdf
https://hal.archives-ouvertes.fr/hal-03502361/file/dtis21-22.pdf
Autor:
R. Gay, V. Della Marca, H. Aziza, M. Mantelli, F. Trenteseaux, F. La Rosa, A. Regnier, S. Niel, A. Marzaki
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, 2021, 42 (6), pp.832-834. ⟨10.1109/LED.2021.3076609⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2021, 42 (6), pp.832-834. ⟨10.1109/LED.2021.3076609⟩
IEEE Electron Device Letters, 2021, 42 (6), pp.832-834. ⟨10.1109/LED.2021.3076609⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2021, 42 (6), pp.832-834. ⟨10.1109/LED.2021.3076609⟩
This letter addresses the design, implementation, and characterization of a novel high-density Triple Gate Transistor in a 40 nm embedded Non-Volatile Memory technology. Deep trenches are used to integrate two vertical transistors connected in parall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37c4cc7118aba766daffaa395352bce5
https://hal.science/hal-03504285/document
https://hal.science/hal-03504285/document
Autor:
Franck Melul, M. Mantelli, Thibault Kempf, Vincenzo Della Marca, Marc Bocquet, Frederique Trenteseaux, Madjid Akbal, Stephan Niel, Arnaud Regnier, Francesco La Rosa
Publikováno v:
2021 IEEE International Memory Workshop (IMW)
2021 IEEE International Memory Workshop (IMW), May 2021, Dresden, France. pp.1-4, ⟨10.1109/IMW51353.2021.9439613⟩
2021 IEEE International Memory Workshop (IMW), May 2021, Dresden, France. pp.1-4, ⟨10.1109/IMW51353.2021.9439613⟩
International audience; In this paper, we detail an experimental study of the hot electron Source Side Injection programming operation of the embedded Select in Trench Memory (eSTM™) cell. A complete set of electrical characterizations is carried o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd45918d7a746722ba4b7f243c6de905
https://doi.org/10.1109/imw51353.2021.9439613
https://doi.org/10.1109/imw51353.2021.9439613
Akademický článek
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Publikováno v:
Periodicals of Engineering and Natural Sciences (PEN). 9:744
Phase change materials (PCMs) can be great solutions as heat sink for energy storage in microgravity conditions. To guarantee the reliability of the systems, the thermal behavior of the PCMs and their degradation should be understood. Two different c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac19003466439916acfa5d850c445667
https://doi.org/10.21533/pen.v9i4.1991
https://doi.org/10.21533/pen.v9i4.1991
Publikováno v:
2019 IEEE 11th International Memory Workshop (IMW).
The eStM (embedded Select in Trench Memory) is a floating gate based non-volatile memory cell conceived, developed and industrialized by STMicroelectronics for General Purpose and Secure Microcontrollers embedded applications. Thanks to its unique ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff0ffb5aef979b2f8a8f91fe8dae7716
https://doi.org/10.1109/imw.2019.8739731
https://doi.org/10.1109/imw.2019.8739731
Autor:
T. Kempf, V.Della Marca, M. Mantelli, J. Postel-Pellerin, J.-M. Portal, P. Masson, A. Regnier, S. Niel
Publikováno v:
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c166bbec2ea2326c87079852d5ffc450
https://doi.org/10.7567/ssdm.2018.b-7-03
https://doi.org/10.7567/ssdm.2018.b-7-03