Zobrazeno 1 - 10
of 935
pro vyhledávání: '"M, Makhviladze"'
Autor:
Kapila, A. K.
Publikováno v:
American Scientist, 1986 May 01. 74(3), 328-328.
Externí odkaz:
https://www.jstor.org/stable/27854236
Autor:
T. M. Makhviladze, M. E. Sarychev
Publikováno v:
Russian Microelectronics. 51:426-434
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba48628e590036e473dcd12d81ae2607
https://doi.org/10.1134/s1063739722700160
https://doi.org/10.1134/s1063739722700160
Autor:
T. M. Makhviladze, M. E. Sarychev
Publikováno v:
Russian Microelectronics. 50:339-346
A model of two-component electromigration in a solid-state conductor with a substitutional impurity (an alloy of a type of a substitutional solid solution) is developed. The previously proposed approach to describe this process, using the methods of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b08a6c6abe69b8a0c8a949ce06e3e33
https://doi.org/10.1134/s1063739721040077
https://doi.org/10.1134/s1063739721040077
Autor:
M. E. Sarychev, T. M. Makhviladze
Publikováno v:
Russian Microelectronics. 49:423-430
In this paper, we develop the theoretical concepts that allow establishing a relationship between the HEM activation energy of the electromigration of the intrinsic ions of a conductive material along the boundary of its compound (interface) with ano
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d93e28ba4c74a99cfcb7fdc156d227c
https://doi.org/10.1134/s1063739720050054
https://doi.org/10.1134/s1063739720050054
Autor:
M. E. Sarychev, T. M. Makhviladze
Publikováno v:
Russian Microelectronics. 48:373-380
A model that allows calculating the effective charge of native and impurity ions during electromigration at the tilt grain boundary of metal is proposed for the first time. It is considered in the model that the main factor resulting in the differenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::058563104dd4885e47e780499fe79597
https://doi.org/10.1134/s106373971905007x
https://doi.org/10.1134/s106373971905007x
Publikováno v:
Physical Mesomechanics. 22:269-274
The paper proposes a nonequilibrium thermodynamic model of quasi-static crack growth at the interface of perfectly elastic materials which are either free of defects or contain nonequilibrium point defects like vacancies or interstitial/substitutiona
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12da3747196d96427af0da8782fe2b19
https://doi.org/10.1134/s1029959919040027
https://doi.org/10.1134/s1029959919040027
Autor:
M. E. Sarychev, T. M. Makhviladze
Publikováno v:
Russian Microelectronics. 47:344-353
A new model of the interaction of an active suspension with a copper surface during the process of the chemical-mechanical polishing (CMP) of the copper metallization is developed. The manner of the formation and growth of the passivation layer is en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::740d3f5a29b0538c9022eb172f7b2f80
https://doi.org/10.1134/s1063739718050050
https://doi.org/10.1134/s1063739718050050
Publikováno v:
Physical Mesomechanics. 21:275-282
A model has been developed to describe the influence of vacancy electromigration in the bulk of joined conducting materials under applied electric current on the shape stability of a flat interface between them. A system of equations is formulated an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e3654fb6040e8f9b700dbd9d2f2dfaa
https://doi.org/10.1134/s102995991804001x
https://doi.org/10.1134/s102995991804001x
Autor:
M. E. Sarychev, T. M. Makhviladze
Publikováno v:
Russian Microelectronics. 47:11-19
We justify and exactly formulate a method for simulating the effect of mechanical stresses induced in a system silicon matrix–oxygen precipitate (SiO2) on the rates of fundamental processes determining the kinetics of precipitation. The developed m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49bb89d4580178db5735ffee17b7067b
https://doi.org/10.1134/s1063739718010043
https://doi.org/10.1134/s1063739718010043
Publikováno v:
Russian Microelectronics. 45:270-277
For the kinetics of the chemical mechanical polishing (CMP) of wafers containing periodic metal–dielectric structures, a model is developed and theoretically investigated with the use of contact mechanics methods for the nonlinear pressure dependen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64813a4fc0976a8abb2c43349f6727fb
https://doi.org/10.1134/s1063739716030045
https://doi.org/10.1134/s1063739716030045