Zobrazeno 1 - 10
of 199
pro vyhledávání: '"Lyutetskiy, A"'
Autor:
Pavel E. Kopytov, Vladislav V. Andryushkin, Evgeniy V. Pirogov, Maxim S. Sobolev, Andrey V. Babichev, Yuri M. Shernyakov, Mikhail V. Maximov, Andrey V. Lyutetskiy, Nikita A. Pikhtin, Leonid Ya. Karachinsky, Innokenty I. Novikov, Sicong Tian, Anton Yu. Egorov
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 24, Iss 5, Pp 709-716 (2024)
The results of investigation of the gain properties of 1300 nm vertical-cavity surface-emitting lasers active regions based on In0.60Ga0.40As/In0.53Al0.20Ga0.27As superlattices and threshold characteristics comparison of superlattices and highly la
Externí odkaz:
https://doaj.org/article/32f389a449994c8fb8ab2680d4c25c36
Autor:
V. V. Dudelev, E. D. Cherotchenko, D. A. Mikhailov, G. Savchenko, S. Losev, A. V. Babichev, A. G. Gladyshev, I. I. Novikov, A. V. Lyutetskiy, S. O. Slipchenko, N. A. Pikhtin, L. Ya. Karachinsky, A.Yu. Egorov, G. S. Sokolovskii
Publikováno v:
2022 International Conference Laser Optics (ICLO).
Autor:
S.O. Slipchenko, I.S. Shashkin, N.V. Voronkova, A.D. Bondarev, D. N. Nikolaev, A.V. Lyutetskiy, A.Y. Leshko, N. A. Pikhtin, P.S. Kop'ev
Publikováno v:
2022 International Conference Laser Optics (ICLO).
Autor:
V.V. Dudelev, E. D. Cherotchenko, D.A. Mikhailov, A.V. Babichev, A.G. Gladyshev, S.N. Losev, I.I. Novikov, A.V. Lyutetskiy, S.O. Slipchenko, N.A. Pikhtin, A.Yu. Andreev, I.V. Yarotskaya, K.A. Podgaetskiy, A.A. Marmalyuk, A.A. Padalitsa, M.A. Ladugin, L.Ya. Karachinsky, A.Yu. Egorov, G.S. Sokolovskii
Publikováno v:
2022 International Conference Laser Optics (ICLO).
Autor:
V. Yu. Mylnikov, D.A. Mikhailov, V.V. Dudelev, E.D. Cherotchenko, A.V. Babichev, A.G. Gladyshev, S.N. Losev, A.V. Lyutetskiy, S.O. Slipchenko, N.A. Pikhtin, I.I. Novikov, L.Ya. Karachinsky, A.Yu. Egorov, G.S. Sokolovskii
Publikováno v:
2022 International Conference Laser Optics (ICLO).
Autor:
V.V. Dudelev, D.A. Mikhailov, A.V. Babichev, E. D. Cherotchenko, A.G. Gladyshev, S.N. Losev, I.I. Novikov, A.V. Lyutetskiy, S.O. Slipchenko, N.A. Pikhtin, A.Yu. Andreev, I.V. Yarotskaya, K.A. Podgaetskiy, A.A. Marmalyuk, A.A. Padalitsa, M.A. Ladugin, L.Ya. Karachinsky, A.Yu. Egorov, G.S. Sokolovskii
Publikováno v:
2022 International Conference Laser Optics (ICLO).
Autor:
V.V. Dudelev, D.A. Mikhailov, E.D. Cherotchenko, D.V. Chistyakov, A.V. Babichev, V. Yu. Mylnikov, A.G. Gladyshev, S.N. Losev, I.I. Novikov, A.V. Lyutetskiy, S.O. Slipchenko, N.A. Pikhtin, L. Ya. Karachinsky, A. Yu. Egorov, G.S. Sokolovskii
Publikováno v:
Optica Advanced Photonics Congress 2022.
Combination of phosphorus-free molecular beam epitaxy (MBE) with metal-organic chemical vapor deposition (MOCVD) enabled record-high power quantum-cascade lasers (QCLs) for 8µm spectral region with total output power of over 16W under pulsed pumping
Autor:
A. V. Babichev, A. S. Ionov, Aleksey D. Andreev, A. G. Gladyshev, Sergey O. Slipchenko, I. I. Novikov, L. Ya. Karachinskii, E. A. Kognovitskaya, A. V. Lyutetskiy, Grigorii S. Sokolovskii, D. V. Denisov, Nikita A. Pikhtin, A. Yu. Egorov, K. O. Voropaev, V. I. Kuchinskii, D. A. Mikhailov, Vladislav V. Dudelev
Publikováno v:
Quantum Electronics. 49:1158-1162
A technology of arrays of distributed-feedback semiconductor lasers for the spectral region of 1.55 μm and their characteristics are presented. Stable single-frequency lasing with a side mode suppression ratio higher than 25 dB is demonstrated. The
Autor:
I. S. Shashkin, Sergey O. Slipchenko, Nikita A. Pikhtin, V. V. Zolotarev, A. V. Lyutetskiy, L.S. Vavilova
Publikováno v:
2020 International Conference Laser Optics (ICLO).
Ultrafast all-electric laser beam angular scan system was developed. Chip-modulator based on quantumconfined semiconductor waveguide heterostructure with surface diffraction grating was investigated. Theoretical and experimental studies of absorption
Autor:
L.S. Vavilova, Nikita A. Pikhtin, V. V. Zolotarev, Sergey O. Slipchenko, A. V. Lyutetskiy, I. S. Shashkin
Publikováno v:
2020 International Conference Laser Optics (ICLO).
Calculation of the design parameters of modulator-chip based on semiconductor heterostructure with a surface Bragg grating, which provide the maximum energy efficiency, widest field of view, and highest resolution for angle modulation of laser beam w