Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Lyudmila Pylneva"'
Autor:
Shinji Miyazaki, David J. Abdallah, Douglas Mckenzie, Ruzhi Zhang, Woo-Kyu Kim, Lyudmila Pylneva, Ralph R. Dammel, Dalil Rahman, Hengpeng Wu, P-H. Lu, M. Nisser, Alberto D. Dioses, Allen Timko, Frank Houlihan
Publikováno v:
Journal of Photopolymer Science and Technology. 20:697-705
New challenges face ArF bottom antireflection coatings (BARCs) with the implementation of high NA lithography and the concurrent increase use of spin-on hard masks. To achieve superior reflectivity control with high NA at least two semi-transparent A
Autor:
Yayi Wei, Yi Yi, Dalil Rahman, Timothy Lee, Lyudmila Pylneva, John Zook, Ping-Hung Lu, Ruzhi Zhang, Douglas Mckenzie, Hengpeng Wu, Mark Neisser, Clement Anyadiegwu, Allen Timko, Ralph R. Dammel, Ron Bradbury, Chenghong Li
Publikováno v:
Advances in Resist Materials and Processing Technology XXVI.
Trilayer stacks with alternating etch selectivity were developed and extensively investigated for high NA immersion lithography at 32nm node and beyond. The conveyance of pattern transfer function from photoresist to Si-containing bottom anti-reflect
Autor:
Ping-Hung Lu, Yayi Wei, Dalil Rahman, Lyudmila Pylneva, Jennifer Loch, David J. Abdallah, Richard Collett, Mark Neisser, Douglas Mckenzie, Allen Timko, Ruzhi Zhang, Hengpeng Wu
Publikováno v:
SPIE Proceedings.
Trilayer stacks with alternating etch selectivity were developed and extensively investigated for high NA immersion lithography at 32nm node and beyond. This paper discusses the fundamental aspects of the Si-containing BARC (Si-BARC) materials with u
Autor:
Douglas Mckenzie, Shinji Miyazaki, Allen Timko, David J. Abdallah, Ruzhi Zhang, Woo-Kyu Kim, Hengpeng Wu, Lyudmila Pylneva, Hishida Aritaka, Ping-Hung Lu, Dalil Rahman, Mark Neisser, Ralph R. Dammel
Publikováno v:
Advances in Resist Materials and Processing Technology XXV.
Spin-on trilayer materials are increasingly being integrated in high density microfabrication that use high NA ArF lithography due to dwindling photoresist film thicknesses, lower integration cost and reduced complexity compared to analogous CVD stac
Autor:
Woo-Kyu Kim, Ping-Hung Lu, Ralph R. Dammel, Lyudmila Pylneva, Ruzhi Zhang, Shinji Miyazaki, Douglas Mckenzie, David J. Abdallah, John J. Biafore, Dalil Rahman, Allen Timko, Frank Houlihan, Hengpeng Wu, Mark Neisser, Alberto D. Dioses
Publikováno v:
SPIE Proceedings.
New challenges face ArF bottom antireflection coatings (BARCs) with the implementation of high NA lithography and the concurrent increase use of spin-on hard masks. To achieve superior reflectivity control with high NA at least two semi-transparent A