Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Lyudmila I. Khirunenko"'
Publikováno v:
physica status solidi (a). 218:2100181
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af760f1a58df3f1fe33de81a25442714
https://doi.org/10.1002/pssa.202100181
https://doi.org/10.1002/pssa.202100181
Publikováno v:
Semiconductors. 51:1107-1110
The distributions of internal stresses in undoped and tin-doped silicon and the influence of electron irradiation with an energy of 5 MeV and of heat treatment at 450°C on the stresses are studied. The stresses are measured by a method based on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b098f227f0f02343cdb100331016952
https://doi.org/10.1134/s1063782617090147
https://doi.org/10.1134/s1063782617090147
Publikováno v:
Physical Review B. 94
Interstitial boron-related defects in silicon subjected to irradiation with 5 MeV electrons at a temperature of 80 K are investigated by Fourier-transform infrared absorption spectroscopy. This study demonstrates the radiation-enhanced annealing of i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81deb2f6b996e63389082b3e648c5bb8
https://doi.org/10.1103/physrevb.94.235210
https://doi.org/10.1103/physrevb.94.235210
Publikováno v:
physica status solidi (a). 216:1900291
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64b7b8c761546bf4d1eaaf61f624f78d
https://doi.org/10.1002/pssa.201900291
https://doi.org/10.1002/pssa.201900291
Publikováno v:
Solid State Phenomena. :412-416
It has been found that isolated V20and V20localized near tin atoms are formed in Ge doped with tin. Simultaneously with V20annealing, the appearance of absorption spectra consisting of sharp lines was observed. The defect to which the spectra found c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4182ca8d33954323263c5eb85ca72b70
https://doi.org/10.4028/www.scientific.net/ssp.205-206.412
https://doi.org/10.4028/www.scientific.net/ssp.205-206.412
Publikováno v:
Semiconductors. 47:269-274
After exposure of silicon with a high content of boron and oxygen to light with the spectrum close to that of solar radiation and with the intensity 70–80 mW cm−2, a new defect corresponding to the absorption band observed at liquid-helium temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f35fd96c3ce7f461255f69704ba747e
https://doi.org/10.1134/s1063782613020127
https://doi.org/10.1134/s1063782613020127
Autor:
Elena I. Shek, Lyudmila I. Khirunenko, David I. Tetel`baum, V.I. Vdovin, A. E. Kalyadin, Nikolai A. Sobolev
Publikováno v:
Solid State Phenomena. :341-346
Luminescent and structural properties of silicon layers with dislocation-related luminescence have been studied. Silicon ions (100 keV) were implanted into n-FZ-Si wafers at a dose exceeding the amorphization threshold by two orders of magnitude. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e3e8b1c62f8a5e04f7d09a2e3453dab
https://doi.org/10.4028/www.scientific.net/ssp.178-179.341
https://doi.org/10.4028/www.scientific.net/ssp.178-179.341
Publikováno v:
Solid State Phenomena. :166-171
The effect of tin on the formation and temperature transformation of VO centers in Ge upon annealing has been investigated. It was found that the doping of Ge with tin leads to a change of reactions involving oxygen and vacancies and the new defect S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2070aa2f850622f9c889da2ff6328f37
https://doi.org/10.4028/www.scientific.net/ssp.178-179.166
https://doi.org/10.4028/www.scientific.net/ssp.178-179.166
Publikováno v:
Solid State Phenomena. :178-182
In silicon with high oxygen and boron content a new absorption band situated near 1026 cm-1 was found in Si after light illuminSuperscript textation with intensity of 70 mW/cm2. It was shown that both oxygen and boron are the component of the defect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22c398e3afbb2481cd2f7869c00f80ce
https://doi.org/10.4028/www.scientific.net/ssp.178-179.178
https://doi.org/10.4028/www.scientific.net/ssp.178-179.178
Autor:
Yu.V. Pomozov, M. G. Sosnin, A.V. Duvanskii, N. V. Abrosimov, H. Riemann, Lyudmila I. Khirunenko
Publikováno v:
Semiconductors. 44:1253-1257
The effect of doping with tin on the ν3 vibrational mode of oxygen in Ge has been studied. The appearance of three new series of absorption lines besides the ν3 oxygen vibration spectra was found. The spectrum structure in each series of lines foun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcb23c3750898a105b42bb8271c27466
https://doi.org/10.1134/s1063782610100015
https://doi.org/10.1134/s1063782610100015