Zobrazeno 1 - 10
of 485
pro vyhledávání: '"Lyu, Pin"'
Deciphering ion channel activity and signaling interactions within cells is one of the key tasks of neuroscience. Currently, measuring this electrophysiological activity is done using patch-clamp1-4 or voltage-sensitive imaging5-8. Unfortunately, the
Externí odkaz:
http://arxiv.org/abs/2312.16461
Autor:
Fang, Hanyan, Mahalingam, Harshitra, Li, Xinzhe, Han, Xu, Qiu, Zhizhan, Han, Yixuan, Noori, Keian, Dulal, Dikshant, Chen, Hongfei, Lyu, Pin, Yang, Tianhao, Li, Jing, Su, Chenliang, Chen, Wei, Cai, Yongqing, Neto, Antonio Castro H., Novoselov, Kostya S., Rodin, Aleksandr, Lu, Jiong
Patterning antidots ("voids") into well-defined antidot lattices creates an intriguing class of artificial structures for the periodic modulation of 2D electron systems, leading to anomalous transport properties and exotic quantum phenomena as well a
Externí odkaz:
http://arxiv.org/abs/2305.04088
Publikováno v:
SIAM Journal on Numerical Analysis, 61(5), 2023, pp. 2157-2181
The discrete gradient structure and the positive definiteness of discrete fractional integrals or derivatives are fundamental to the numerical stability in long-time simulation of nonlinear integro-differential models. We build up a discrete gradient
Externí odkaz:
http://arxiv.org/abs/2301.12474
Autor:
Lyu, Pin, Sødequist, Joachim, Sheng, Xiaoyu, Qiu, Zhizhan, Tadich, Anton, Li, Qile, Edmonds, Mark T., Redondo, Jesús, Švec, Martin, Olsen, Thomas, Lu, Jiong
Publikováno v:
ACS Nano 17 (16), 15441-15448 (2023)
Emergent quantum phenomena in two-dimensional van der Waal (vdW) magnets are largely governed by the interplay between the exchange and Coulomb interactions. The ability to tune the Coulomb interaction in such strongly correlated materials enables th
Externí odkaz:
http://arxiv.org/abs/2212.02772
Autor:
Vu, Thi-Hai-Yen, Lyu, Pin, Jo, Na Hyun, Trang, Chi Xuan, Li, Qile, Bostwick, Aaron, Jozwiak, Chris, Rotenberg, Eli, Lu, Jiong, Fuhrer, Michael S., Edmonds, Mark T.
Strain-induced pseudo magnetic fields offer the possibility of realizing zero magnetic field Quantum Hall effect in graphene, possibly up to room temperature, representing a promising avenue for lossless charge transport applications. Strain engineer
Externí odkaz:
http://arxiv.org/abs/2211.04014
Energy carrier evolution is crucial for material performance. Ultrafast microscopy has been widely applied to visualize the spatiotemporal evolution of energy carriers. However, direct imaging of small amounts of energy carriers on nanoscale remains
Externí odkaz:
http://arxiv.org/abs/2205.12573
Publikováno v:
Gong-kuang zidonghua, Vol 50, Iss 1, Pp 72-79 (2024)
Prevalent research on dust pollution during fully mechanized excavation has mainly focused on the impact of individual factors on the effectiveness of air curtains in fully mechanized excavation sites. However, scant research has been devoted to the
Externí odkaz:
https://doaj.org/article/5a57585769114747ad7bc208e8bac639
Autor:
Telychko, Mykola, Noori, Keian, Biswas, Hillol, Dulal, Dikshant, Lyu, Pin, Li, Jing, Tsai, Hsin-Zon, Fang, Hanyan, Qiu, Zhizhan, Yap, Zhun Wai, Watanabe, Kenji, Taniguchi, Takashi, Crommie, Michael F., Rodin, Aleksandr, Lu, Jiong
We report an atomically-precise integration of individual nitrogen (N) dopant as an in-plane artificial nucleus in a graphene device by atomic implantation to probe its gate-tunable quantum states and correlation effects. The N dopant creates the cha
Externí odkaz:
http://arxiv.org/abs/2111.09149
A high-order and fast scheme with variable time steps for the time-fractional Black-Scholes equation
Autor:
Song, Kerui, Lyu, Pin
In this paper, a high-order and fast numerical method is investigated for the time-fractional Black-Scholes equation. In order to deal with the typical weak initial singularities of the solution, we construct a finite difference scheme with variable
Externí odkaz:
http://arxiv.org/abs/2109.02028
Autor:
Fang, Hanyan, Gallardo, Aurelio, Dulal, Dikshant, Qiu, Zhizhan, Su, Jie, Telychko, Mykola, Mahalingam, Harshitra, Lyu, Pin, Han, Yixuan, Zheng, Yi, Cai, Yongqing, Rodin, Aleksandr, Jelínek, Pavel, Lu, Jiong
We report that mono-elemental black phosphorus presents a new electronic self-passivation scheme of single vacancy (SV). By means of low-temperature scanning tunneling microscopy and bond-resolved non-contact atomic force microscopy, we demonstrate t
Externí odkaz:
http://arxiv.org/abs/2107.03296