Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Lynne Koker"'
Publikováno v:
physica status solidi (a). 197:117-122
Laser assisted etching of n-type silicon, without an applied potential, to form porous silicon has been studied in a variety of etchants. The range of pore diameters correlates with the ratio of the activities of HF and HF - 2 . Where the activity ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7272b3ac46c74f1d8fa4ce73810cf9a9
https://doi.org/10.1002/pssa.200306479
https://doi.org/10.1002/pssa.200306479
Publikováno v:
The Journal of Physical Chemistry B. 106:4424-4431
Photoluminescent porous silicon has been produced in a variety of etchants using laser-assisted etching of silicon without an applied potential. Porous silicon (por-Si) produced from etchants containing K+, Cs+, or Rb+ can have cubic crystallites of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9141971ef160ff65e98b4bd088c497b7
https://doi.org/10.1021/jp013213z
https://doi.org/10.1021/jp013213z
Autor:
Lynne Koker, Kurt W. Kolasinski
Publikováno v:
The Journal of Physical Chemistry B. 105:3864-3871
The formation rate of porous silicon by photoelectrochemical etching of n-type silicon is measured in situ by a novel technique. The reflection of the laser beam used to drive the reaction contains...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::482aff02d8dd25e937d22da02d412083
https://doi.org/10.1021/jp003206v
https://doi.org/10.1021/jp003206v
Autor:
Lynne Koker, Kurt W. Kolasinski
Publikováno v:
Physical Chemistry Chemical Physics. 2:277-281
The irradiation of n-type Si(111) submerged in HF(aq) with a UV, visible or IR laser can lead to the formation of photoluminescent porous silicon (por-Si) thin films. We demonstrate that two distinct photoelectrochemical etching processes are induced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aa5d224de2366f6235beae44c3fba8b
https://doi.org/10.1039/a908383i
https://doi.org/10.1039/a908383i
Autor:
Kurt W. Kolasinski, Lynne Koker
Publikováno v:
Materials Science and Engineering: B. :132-135
The rate of formation of photochemical porous silicon is measured in situ by studying the rate of increase in the radius of the circular interference patterns contained in the reflected laser beam. This technique is used to study the effects on etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a373fcb39432c17b43c06dc7963a8cc
https://doi.org/10.1016/s0921-5107(99)00410-9
https://doi.org/10.1016/s0921-5107(99)00410-9
Autor:
Lynne Koker, Kurt W. Kolasinski
Publikováno v:
Journal of Applied Physics. 86:1800-1807
A HeNe laser has been used to fabricate photochemically a photoluminescent porous Si thin film on top of crystalline Si. The porous Si film has Gaussian shaped upper and lower interfaces. When the reflection of a laser beam from this film during, or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c09d57a982c83199d2f35bf894a1467d
https://doi.org/10.1063/1.370972
https://doi.org/10.1063/1.370972
Publikováno v:
ResearcherID
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3231aca1179c14de347c3839f624296
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000165756500012&KeyUID=WOS:000165756500012
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000165756500012&KeyUID=WOS:000165756500012
Publikováno v:
ResearcherID
We have used a variety of laser wavelengths (365, 473, 633, 685, 730 nm) to produced porous silicon thin films by photochemically etching n-type Si in 48% HF in aqueous solution. Photoluminescence (PL) has been excited either with 365 or 473 nm light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00c7033eb8e09cead75df4d8f856aa3a
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000085591900028&KeyUID=WOS:000085591900028
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000085591900028&KeyUID=WOS:000085591900028
Autor:
A. Wellner, J. C. Barnard, Richard E. Palmer, Kurt W. Kolasinski, Lynne Koker, Paul A. Hamley, Santanu Ganguly, Christian N. Field, Martyn Poliakoff, Mark Aindow
Publikováno v:
Scopus-Elsevier
Porous silicon thin films created under laser illumination in fluoride solutions without biasing have been studied by a variety of techniques to investigate the film structure and photoluminescence (PL). The use of ultrathin silicon wafers allows us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73df29d061cf09c1bb3ffa54c3d1f021
http://www.scopus.com/inward/record.url?eid=2-s2.0-0000900892&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0000900892&partnerID=MN8TOARS