Zobrazeno 1 - 10
of 346
pro vyhledávání: '"Lynn, Kelvin"'
Autor:
Sun, Rujun, Ooi, Yu Kee, Bhattacharyya, Arkka, Saleh, Muad, Krishnamoorthy, Sriram, Lynn, Kelvin G., Scarpulla, Michael A.
Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionally-doped (UID) and vertical gradient freeze (VGF)-grown Zr-doped beta-G
Externí odkaz:
http://arxiv.org/abs/2011.03657
Currently, Fe doping in the ~10^18 cm-3 range is the most widely-available method for producing semi-insulating single crystalline beta-Ga2O3 substrates. Red luminescence features have been reported from multiple types of Ga2O3 samples including Fe-d
Externí odkaz:
http://arxiv.org/abs/2007.11135
Autor:
Saleh, Muad, Varley, Joel B., Jesenovec, Jani, Bhattacharyya, Arkka, Krishnamoorthy, Sriram, Swain, Santosh, Lynn, Kelvin
N type conductivity of \b{eta}-Ga2O3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of \b{eta}-Ga2O3 single crystals using UV-Vis-NIR absorption and Hall Effect me
Externí odkaz:
http://arxiv.org/abs/2001.11187
Autor:
Bhattacharyya, Arkka, Ranga, Praneeth, Saleh, Muad, Roy, Saurav, Scarpulla, Michael A., Lynn, Kelvin G., Krishnamoorthy, Sriram
This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $\beta$-Ga$_2$O$_3$ by insertion of an ultra-thin SiO$_2$ dielectric interlayer at the metal-semiconductor junction, which can potentially lower
Externí odkaz:
http://arxiv.org/abs/2001.07326
Autor:
McCoy, Jedidiah J., Kakkireni, Saketh, Gélinas, Guillaume, Garaffa, Jeremy F., Swain, Santosh K., Lynn, Kelvin G.
Publikováno v:
In Journal of Crystal Growth 1 April 2020 535
Autor:
Al-Hamdi, Tawfeeq K., McPherson, Seth W., Swain, Santosh K., Jennings, Joshah, Duenow, Joel N., Zheng, X., Albin, D.S., Ablekim, T., Colegrove, E., Amarasinghe, M., Ferguson, Andrew, Metzger, Wyatt K., Szeles, Csaba, Lynn, Kelvin G.
Publikováno v:
In Journal of Crystal Growth 15 March 2020 534
Acquiring a portable high density charged particles trap might consist of an array of micro-Penning-Malmberg traps (microtraps) with substantially lower end barriers potential than conventional Penning-Malmberg traps [1]. We report on the progress of
Externí odkaz:
http://arxiv.org/abs/1307.2335
The charged particles storage capacity of microtraps (micro-Penning-Malmberg traps) with large length to radius aspect ratios and radii of the order of tens of microns was explored. Simulation studies of the motions of charged particles were conducte
Externí odkaz:
http://arxiv.org/abs/1301.0030
Publikováno v:
In Journal of Crystal Growth 1 February 2019 507:16-22
Publikováno v:
In Journal of Alloys and Compounds 30 December 2017 729:1031-1037