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pro vyhledávání: '"Lyes Ben-Hammou"'
Publikováno v:
Micromachines, Vol 15, Iss 11, p 1356 (2024)
Graded AlGaN channel High-Electron Mobility Transistor (HEMT) technology is emerging as a strong candidate for millimeter-wave applications, as superior efficiency and linearity performances can be achieved. In this paper, graded channel AlGaN/GaN HE
Externí odkaz:
https://doaj.org/article/2802957f54784e2687088729cf6bce99
Autor:
Kathia Harrouche, Srisaran Venkatachalam, Lyes Ben-Hammou, François Grandpierron, Etienne Okada, Farid Medjdoub
Publikováno v:
Micromachines, Vol 14, Iss 2, p 291 (2023)
In this paper, we report on an enhancement of mm-wave power performances with a vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a non-intentionally doped GaN channel layer, enabling the prevention of punch-th
Externí odkaz:
https://doaj.org/article/a4a7fe78fe7748e080c7db3cc4a85856