Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Lye Hing Chua"'
Autor:
Jishen Zhang, Chengkuan Wang, Kaizhen Han, Chen Sun, Lye-Hing Chua, Haiwen Xu, Ying Wu, Xiao Gong, Wei Zou, Todd Henry
Publikováno v:
2019 Symposium on VLSI Technology.
A novel ladder transmission line method (LTLM) that features eliminated parasitic resistance from contact metal and access electrodes, simple fabrication process, and $2\times 10^{-10}\Omega-\text{cm}^{2}$ resolution for highly-accurate extraction of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32b4b3a88fdcd19b78543fbe782903f5
https://doi.org/10.23919/vlsit.2019.8776494
https://doi.org/10.23919/vlsit.2019.8776494
Publikováno v:
2019 19th International Workshop on Junction Technology (IWJT).
Contact resistance R c in the source/drain (S/D) regions of field-effect transistors (FETs) has increased significantly due to the shrinkage of contact area accompanied with the scaling of device dimensions in the past decades [1] . For the state-of-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96d3d288b5ab517a585674a17c32e4ce
https://doi.org/10.23919/iwjt.2019.8802888
https://doi.org/10.23919/iwjt.2019.8802888
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
For the first time, Ga ion implantation (Ga I/I) on in-situ Ga-doped Ge (Ge:Ga) and GeSn (GeSn:Ga) films at various temperatures (300 °C, 25 °C, and −100 °C) was investigated. It is found that cryogenic (−100 °C) and room temperature (RT, 25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b730dab3436fbe9ec6f92126c30f0c5
https://doi.org/10.1109/iedm.2018.8614619
https://doi.org/10.1109/iedm.2018.8614619
Autor:
Lye Hing Chua, Thirumal Thanigaivelan, Qian Zhou, Yi Tong, Lan Xiang Wang, Todd Henry, Kain Lu Low, Yee-Chia Yeo
Publikováno v:
IEEE Transactions on Electron Devices. 61:3499-3506
We report the first demonstration of a nickel silicide (NiSi) contact formation technique using cold silicon (Si) preamorphization implant (PAI) combined with presilicide sulfur (S) implant. The cold Si PAI suppresses the agglomeration of NiSi film a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2db527e569b931de49ea05ae551678fb
https://doi.org/10.1109/ted.2014.2347705
https://doi.org/10.1109/ted.2014.2347705
Autor:
Todd Henry, Cleon Chan, Sujith Subramanian, Lye-Hing Chua, Wei Zou, Yee-Chia Yeo, Vijay Richard D'Costa, Eugene Y.-J. Kong
Publikováno v:
IEEE Transactions on Electron Devices. 61:3159-3165
Plasma doping (PLAD), a high-throughput ion implantation technique capable of achieving ultrashallow junctions and conformal doping of 3-D structures such as fin field-effect transistors, is investigated as an alternative to conventional beam-line io
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0224bf327d7f58f156f44108b3b3c12
https://doi.org/10.1109/ted.2014.2341619
https://doi.org/10.1109/ted.2014.2341619
The reactions of atomic hydrogen with ethylene and acetylene adsorbed on Si(100) have been studied. In the absence of atomic hydrogen, acetylene and ethylene display a comparatively simple surface chemistry, both adsorbing molecularly at low temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7629635e3a1254aff109594af44843b
https://doi.org/10.1016/0925-9635(94)05226-3
https://doi.org/10.1016/0925-9635(94)05226-3
Autor:
Lanxiang Wang, Todd Henry, Wei Zou, Xiao Gong, Bin Liu, Lye-Hing Chua, Qian Zhou, Christopher R. Hatem, Yee-Chia Yeo, Pengfei Guo
Publikováno v:
Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
We investigated the effect of phosphorus ion (P+) implant temperature on the material properties of epitaxial GeSn alloy and the electrical characteristics of GeSn n+/p diodes. Hot P+ implant maintains the single crystallinity of GeSn during implant.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efecb265bb29917043d04685c8bff0e3
https://doi.org/10.1109/vlsi-tsa.2014.6839659
https://doi.org/10.1109/vlsi-tsa.2014.6839659
Autor:
Lye Hing Chua, Richard B. Jackman
Publikováno v:
Diamond and Related Materials. 1:895-899
This paper briefly considers the potential applications of a-C:H diamond-like carbon (DLC) thin films within the field of microelectronics. DLC films were fabricated on silicon and GaAs using a saddle field beam source and their dielectric behaviour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f54383a03c4d8197c151116c46f7336
https://doi.org/10.1016/0925-9635(92)90131-7
https://doi.org/10.1016/0925-9635(92)90131-7
Autor:
Sin Leng Lim, Vijay Richard D'Costa, Wei Zou, T. K. Chan, Eng Soon Tok, Christopher R. Hatem, Todd Henry, Lye Hing Chua, Yee-Chia Yeo, Wei Wang, Thomas Osipowicz, Lanxiang Wang
Publikováno v:
Applied Physics Letters. 105:122108
We have investigated the optical properties of Ge and GeSn alloys implanted with phosphorus ions at 400 °C by spectroscopic ellipsometry from far-infrared to ultraviolet. The dielectric response of heated GeSn implants displays structural and transp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56960479ec9a5b46c0d90a4bfa036c8d
https://doi.org/10.1063/1.4896507
https://doi.org/10.1063/1.4896507
Publikováno v:
SURFACE SCIENCE. 315(1-2)
The effect of atomic hydrogen on the adsorbed layers formed on Si(100) from ethylene and acetylene exposure has been studied using thermal desorption spectroscopy. Considerable changes in surface reactivity patterns have been measured, with surface c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d43c4883f8a9bd50edb44059183154f
http://ora.ox.ac.uk/objects/uuid:940ca0ce-67f0-4895-99ca-d6c18ec17768
http://ora.ox.ac.uk/objects/uuid:940ca0ce-67f0-4895-99ca-d6c18ec17768