Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Lyapin, V.G."'
Autor:
Trzaska, W.H., Knyazheva, G.N., Perkowski, J., Andrzejewski, J., Khlebnikov, S.V., Kozulin, E.M., Lyapin, V.G., Malkiewicz, T., Mutterer, M.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 2009 267(20):3403-3408
Autor:
Knyazheva, G.N., Khlebnikov, S.V., Kozulin, E.M., Kuzmina, T.E., Lyapin, V.G., Mutterer, M., Perkowski, J., Trzaska, W.H.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 2006 248(1):7-15
Publikováno v:
In Thin Solid Films 2004 451:402-407
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 2002 477(1):372-377
Autor:
Rubchenya, V.A. *, Trzaska, W.H., Vakhtin, D.N., Äystö, J., Dendooven, P., Hankonen, S., Jokinen, A., Radivojevich, Z., Wang, J.C., Alkhazov, I.D., Evsenin, A.V., Khlebnikov, S.V., Kuznetsov, A.V., Lyapin, V.G., Osetrov, O.I., Tiourin, G.P., Aleksandrov, A.A., Penionzhkevich, Yu.E.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 2001 463(3):653-662
Autor:
Kuznetsov, A.V., van Veldhuizen, E.J., Westerberg, L. *, Lyapin, V.G., Aleklett, K., Loveland, W., Bondorf, J., Jakobsson, B., Whitlow, H.J., El Bouanani, M.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 2000 452(3):525-532
Autor:
Antropov, A.E., Bolokhov, P.A., Fedotov, A.V., Feofilov, G.A., Izrailov, E.K., Kasatkin, V.A., Kolojvari, A.A., Larin, M.P., Lyapin, V.G., Martinov, V., Novikov, I.A., Kondratiev, V.P., Lazarev, V., Popov, P., Potapov, S.V., Stolyarov, O.I., Trzaska, W.H., Tsimbal, F.A., Tulina, T.A., Valiev, F.F., Vinogradov, L.I.
Publikováno v:
In Nuclear Physics B (Proceedings Supplements) 1999 78(1):416-421
Autor:
Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Vinogradov, A.O., Pilipenko, V.A., Petlitskaya, T.V., Anischik, V.M., Konakova, R.V., Korostinskaya, T.V., Kostylyov, V.P., Kudryk, Ya.Ya., Lyapin, V.G., Romanets, P.N., Sheremet, V.N.
We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n⁺ -n-structures whose n⁺ -layer was formed using phosphorus diffusion or ion implantation. The ρс(Т) depend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::04cc9e8a6a1a55aca66377ee33090c1c
http://dspace.nbuv.gov.ua/handle/123456789/117786
http://dspace.nbuv.gov.ua/handle/123456789/117786
We investigated electrophysical properties of the SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures that are used in technological process when manufacturing transmission lines for microwave integrated circuits. The SiO₂-GaAs structures were formed usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::433233fe0e057d5ea9d333a4443a3f30
http://dspace.nbuv.gov.ua/handle/123456789/121160
http://dspace.nbuv.gov.ua/handle/123456789/121160
Autor:
Boltovets, N.S., Basanets, V.V., Ivanov, V.N., Krivutsa, V.A., Tsvir, A.V., Belyaev, A.E., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A., Venger, E.F., Voitsikhovskyi, D.I., Kholevchuk, V.V., Mitin, V.F.
We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route is proposed to produce microdi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::2276037dba8ac0f88b4cf7e42c92d3c6
http://dspace.nbuv.gov.ua/handle/123456789/121166
http://dspace.nbuv.gov.ua/handle/123456789/121166