Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Luxiao Xie"'
Publikováno v:
AIP Advances, Vol 13, Iss 8, Pp 085009-085009-7 (2023)
Silicon-on-insulator (SOI) devices have many advantages, such as high speed, low energy consumption, radiation-hard, and high integration. In this paper, the separation by implanted oxygen process under low-dose implantation conditions is studied by
Externí odkaz:
https://doaj.org/article/e1c564ee230d435d94dc6cdd41ec55ef
Autor:
Luxiao Xie, Hui Zhang, Xinjian Xie, Endong Wang, Xiangyu Lin, Yuxuan Song, Guodong Liu, Guifeng Chen
Publikováno v:
ACS Omega. 7:41100-41106
Herein, the defect-related properties of an AlN sample prepared based on the optimal process parameters by metal nitride vapor phase epitaxy (MNVPE) were investigated. The FWHM values of the (0002)/(101̅2) planes of the sample by MNVPE are 397/422 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ab75db1f1cc9f0959bd73ddec4f81a1
https://doi.org/10.1021/acsomega.2c04626
https://doi.org/10.1021/acsomega.2c04626
Autor:
Luxiao Xie, Hui Zhang, Xinjian Xie, Endong Wang, Xiangyu Lin, Yuxuan Song, Guodong Liu, Guifeng Chen
Publikováno v:
ACS Omega. 7:23497-23502
The epitaxial aluminum nitride (AlN) crystals were grown on c-plane sapphire using high-temperature metal nitride vapor phase epitaxy at the source materials' different molar flow ratios (V/III ratios). The effects of various V/III ratios on the surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4a046f1dd5fe2100bf687c17e799487
https://doi.org/10.1021/acsomega.2c01890
https://doi.org/10.1021/acsomega.2c01890
Publikováno v:
Research on Chemical Intermediates. 47:4825-4835
CO2 reduction with water and light illumination is realized using a nitride (InxGa1-xN) photoelectrode that separates pairs of electrons and holes, thereby driving oxidation and reduction reactions. InxGa1-xN is a promising material for photocatalysi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::099d6772593371134a96cebafb82efae
https://doi.org/10.1007/s11164-021-04556-x
https://doi.org/10.1007/s11164-021-04556-x
Autor:
Luxiao Xie, Hui Zhang, Xinjian Xie, Endong Wang, Zishuang Cheng, Guodong Liu, Lifeng Bian, Guifeng Chen
Publikováno v:
Vacuum. 210:111809
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45afaf877147ede37f7e88a1b6f7d1bb
https://doi.org/10.1016/j.vacuum.2023.111809
https://doi.org/10.1016/j.vacuum.2023.111809
Autor:
Luxiao Xie, Hui Zhang, Xinjian Xie, Endong Wang, Xiangyu Lin, Yuxuan Song, Guodong Liu, Guifeng Chen
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0f6fe5592db16f0541e71ddc8cc7505
https://doi.org/10.2139/ssrn.4054608
https://doi.org/10.2139/ssrn.4054608
Autor:
Luxiao Xie, Hui Zhang, Xinjian Xie, Endong Wang, Xiangyu Lin, Yuxuan Song, Guodong Liu, Guifeng Chen
Publikováno v:
Materials Science in Semiconductor Processing. 150:106975
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28be80ce53a2d4134f30f8a932368490
https://doi.org/10.1016/j.mssp.2022.106975
https://doi.org/10.1016/j.mssp.2022.106975
Autor:
Guodong Liu, Yiming Xiao, Hui Zhang, Guifeng Chen, Zhang Yin, Haoruo Liang, Xie Xinjian, Zishuang Cheng, Zhiwei Xing, Haoran Li, Luxiao Xie, Huaize Liu, Lifeng Bian
Publikováno v:
Optical Materials. 111:110678
The UV optical properties of (0 0 2) AlN thin films were studied. Under the excitation of 213 nm laser, there are two emission peaks of AlN in UV-A band with thermal quenching phenomenon. Combined with variable temperature Raman experiment, it is pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4eecf765338dad55d6b8e8956b94ada0
https://doi.org/10.1016/j.optmat.2020.110678
https://doi.org/10.1016/j.optmat.2020.110678
Autor:
Hui Zhang, Xie Xinjian, Luxiao Xie, Zishuang Cheng, Guifeng Chen, Boling Long, Wei Li, Tianyu Guo, Gudong Liu
Publikováno v:
Functional Materials Letters. 13:2050028
I–III–VI chalcopyrite copper indium selenium is one of therepresentatives of the light absorbing layer material, and is often used for a thin-film solar cell. With the development of nano-technology, CuInSe2 quantum dots (CISe QDs) which have int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::866b30ccee27dae83f0754b6f84f279e
https://doi.org/10.1142/s1793604720500289
https://doi.org/10.1142/s1793604720500289
Autor:
Guodong Liu, Junguang Tao, Li Yuan, Guifeng Chen, Yaxin Wang, Hui Zhang, Xie Xinjian, Luxiao Xie, Tianyu Guo
Publikováno v:
Applied Physics Express. 12:111003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d0101f9c628cde085ae53b75ae52f60
https://doi.org/10.7567/1882-0786/ab495c
https://doi.org/10.7567/1882-0786/ab495c