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Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
A shift of the threshold voltage (V th ) in high voltage metal-oxide-semiconductor field effect transistors (n-MOSFET) was observed after As-implantation performed with different types of implanters. This shift was reproducible in different wafers an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b51ef4f966f10920270e69e08e2d580a
https://doi.org/10.1109/iit.2018.8807898
https://doi.org/10.1109/iit.2018.8807898
