Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Lutz Deutschmann"'
Publikováno v:
Advanced Materials. 6:392-395
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7972c55db7f0401f266e022b7f718b65
https://doi.org/10.1002/adma.19940060512
https://doi.org/10.1002/adma.19940060512
Publikováno v:
MRS Proceedings. 470
A cleaning process using anhydrous HF (AHF)/methanol and ozone is carried out in a STEAG-AST Vapor Phase Cleaning module (VPC). This module is integrated in a state-of-the-art cluster tool also consisting of a STEAG-AST Rapid Thermal Oxidation module
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fef8f0a7b9cde95be7cc9a950e50741a
https://doi.org/10.1557/proc-470-237
https://doi.org/10.1557/proc-470-237
Autor:
Lutz Deutschmann, Steven D. Marcus
Publikováno v:
MRS Proceedings. 387
The silicidation of chemical vapor deposited (CVD) titanium has been investigated utilizing the Materials Research Corporation (MRC) PHOENIX™ cluster-tool platform which incorporated an AST elektronik GmbH cluster RTP chamber. This initial investig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::817ec2539a25089fd427d81e7c23c444
https://doi.org/10.1557/proc-387-437
https://doi.org/10.1557/proc-387-437
Publikováno v:
MRS Proceedings. 342
We present recent results obtained in thin gate oxides. These oxides are grown in a new clusterable RTP-system for 200mm diameter wafers. The main innovations of the reactor are dealing with the chamber geometry, gas distribution, double pyrometry an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2a82214339215cbd36bf158bcb9771d
https://doi.org/10.1557/proc-342-175
https://doi.org/10.1557/proc-342-175
Autor:
H. Grünwald, Harald Suhr, H. Wendel, E. Feurer, A. Etspüler, A. Weber, S. Reich, J. Bald, Helga Holzschuh, Lutz Deutschmann, Christa Dipl Chem Dr Haag, I. Traus, Christian Oehr, B. Waimer, R. Schmid
Publikováno v:
Le Journal de Physique Colloques. 50:C5-739
About 50 organometallic compounds have been tested as precursors in the plasma-enhanced chemical vapour deposition (PECVD) of metallic and oxidic films. The classes of compounds which are best suited for the deposition are described. Experimental tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f966f798c46c378dcef98ccaa2defa4
https://doi.org/10.1051/jphyscol:1989589
https://doi.org/10.1051/jphyscol:1989589
Autor:
D. Laviale, Isabelle Sagnes, F. Martin, Anton J. Bauer, F. Glowacki, D. Bensahel, Barbara Froeschle, Lutz Deutschmann, A. Halimaoui
Publikováno v:
Scopus-Elsevier
The purpose of this publication is to give an insight into process development performed in two modules which belong to a cluster tool designed for the gate stack process sequence of cleaning, gate oxidation, and polysilicon chemical vapor deposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::369b57f2bdf7b07eeae9370e9d3e518f
http://www.scopus.com/inward/record.url?eid=2-s2.0-0031365095&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0031365095&partnerID=MN8TOARS
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Conference
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