Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Lutz, C.R."'
Publikováno v:
In Journal of Crystal Growth May 2001 225(2-4):397-404
Autor:
Lutz, C.R., Deluca, P.M., Stevens, K.S., Landini, B.E., Welser, R.E., Welty, R.J., Asbeck, P.M.
Publikováno v:
Lutz, C.R. ; Deluca, P.M. ; Stevens, K.S. ; Landini, B.E. ; Welser, R.E. ; Welty, R.J. ; Asbeck, P.M. (2002) Enhancing the Device Performance of III-V Based Bipolar Transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
Superior DC and RF performance are obtained using InGaP/GaInAsN and InP/GaInAs double heterojunction bipolar transistors with compositionally graded base layers. By grading the base layer energy band-gap, we achieve nearly a 100% improvement in DC cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02ef4e654ed8f3eb5f48bd7a8718b700
Publikováno v:
Stevens, K.S. ; Welser, R.E. ; Chaplin, M. ; Lutz, C.R. ; Pan, N. (2000) Ledge Design of InGaP Emitter GaAs Based HBTs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
A wide range of emitter composition, thickness, and doping is studied via dc current gain measurements on large area GaAs based heterojunction bipolar transistors (HBTs) at both room and elevated temperatures. InGaP emitters offer the widest thicknes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7dd3df4e1a9607e4515be001608b3fa3
Publikováno v:
IEEE Compound Semiconductor Integrated Circuit Symposium, 2004; 2004, p75-78, 4p
Publikováno v:
Proceedings IEEE Lester Eastman Conference on High Performance Devices; 2002, p358-363, 6p
Publikováno v:
Proceedings of the 2001 BIPOLAR/BiCMOS Circuits & Technology Meeting (Cat. No.01CH37212); 2001, p74-77, 4p
Autor:
Lutz, C.R., Defonzo, A.P.
Publikováno v:
1987 IEEE MTT-S International Microwave Symposium Digest; 1987, Issue 2, p645-648, 4p
Publikováno v:
IEEE Electron Device Letters; May2000, Vol. 21 Issue 5, p196-199, 4p
Publikováno v:
IEEE Electron Device Letters; Oct2002, Vol. 23 Issue 10, p582-584, 3p
Publikováno v:
IEEE Photonics Technology Letters; 1995, Vol. 7 Issue 6, p596-598, 3p