Zobrazeno 1 - 10
of 193
pro vyhledávání: '"Lutich, A. A."'
Autor:
Gaponenko, Maxim S., Tolstik, Nikolai A., Lutich, Andrey A., Onushchenko, Alexei A., Yumashev, Konstantin V.
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures September 2013 53:63-65
Publikováno v:
In Chemical Physics Letters 18 May 2011 508(1-3):67-70
Autor:
Kudrawiec, R, Podhorodecki, A, Mirowska, N, Misiewicz, J, Molchan, I, Gaponenko, N.V, Lutich, A.A, Gaponenko, S.V
Publikováno v:
In Materials Science & Engineering B 2003 105(1):53-56
Publikováno v:
33rd European Mask and Lithography Conference.
Traditional CD-SEM metrology reaches its limits when measuring complex configurations (e.g. advanced node contact configurations). SEM extracted contours embody valuable information which is essential for building a robust etch prediction model [1, 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cf056246fea7122a4a4d0fa802e3a31
https://doi.org/10.1117/12.2279694
https://doi.org/10.1117/12.2279694
Publikováno v:
33rd European Mask and Lithography Conference.
Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfaad192d5106801594ffaa1068d217f
https://doi.org/10.1117/12.2279700
https://doi.org/10.1117/12.2279700
Autor:
Andrey Lutich, Katherina Babich, Navneet Jain, Pritchard David, Piyush Verma, David M. Permana, Kai Sun, Tuhin Guha Neogi, Francois Weishbuch, Deepal Wehella-Gamage, Mahbub Rashed, Benoit Francois Claude Ramadout, Gowtham Vangara, Juhan Kim, Thomas Herrmann
Publikováno v:
SPIE Proceedings.
In this paper, we describe an integrated design space analysis approach consisting of full factorial layout generation, lithography simulations with added proximity effects, and rigorous statistical analysis through monte-carlo simulations which is u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f6919bf1e43cd1f7853232e10ac0be8
https://doi.org/10.1117/12.2258668
https://doi.org/10.1117/12.2258668
Publikováno v:
SPIE Proceedings.
Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af71bec257a5eb2d8b3ae18c45a9514e
https://doi.org/10.1117/12.2257994
https://doi.org/10.1117/12.2257994
Autor:
Andrey Lutich
Publikováno v:
SPIE Proceedings.
This research considers problem of sampling design space of a given physical design layout. More specifically, it deals with extraction of a set of characteristic design patterns evenly distributed within design space occupied by the layout. The meth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8a4a2857efc865471dc518f4d99a6a2
https://doi.org/10.1117/12.2257988
https://doi.org/10.1117/12.2257988
Autor:
Giménez, Sixto, Rogach, Andrey L., Lutich, Andrey A., Gross, Dieter, Poeschl, Andreas, Susha, Andrei S., Mora-Seró, Ivan, Lana-Villarreal, Teresa, Bisquert, Juan
Publikováno v:
Journal of Applied Physics; Jul2011, Vol. 110 Issue 1, p014314, 7p, 1 Diagram, 1 Chart, 4 Graphs
Autor:
Jianhong Zhang, Lutich, Andrey A., Susha, Andrei S., Döblinger, Markus, Mauser, Christian, Govorov, Alexander O., Rogach, Andrey L., Jäckel, Frank, Feldmann, Jochen
Publikováno v:
Journal of Applied Physics; Jul2010, Vol. 107 Issue 12, p123516, 5p, 2 Diagrams, 1 Graph