Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Luther Wang"'
Autor:
Gregory J. O. Beran, Luther Wang, Sean D. Moore, James K. Harper, Joshua D. Hartman, Alexander B. Elliott
Publikováno v:
ChemPhysChem. 22:1008-1017
The ability to theoretically predict accurate NMR chemical shifts in solids is increasingly important due to the roles such shifts play in selecting among proposed model structures. Here, two theoretical methods are evaluated for their ability to ass
Autor:
James K. Harper, Luther Wang
Publikováno v:
CrystEngComm. 23:7061-7071
A two-step process is described for refining crystal structures from any source. This approach employs an initial lattice-including DFT relaxation step followed by a Monte Carlo sampling procedure to create new candidate positions for each atom withi
Autor:
Chen Yang, Corbin R. Lewis, James K. Harper, Leonard J. Mueller, Luther Wang, Robert P. Young
Publikováno v:
Magnetic Resonance in Chemistry. 57:211-223
The representation of nuclear magnetic resonance (NMR) tensors as surfaces on three-dimensional molecular models is an information-rich presentation that highlights the geometric relationship between tensor principal components and the underlying mol
Autor:
Luther, Wang, Alexander B, Elliott, Sean D, Moore, Gregory J O, Beran, Joshua D, Hartman, James K, Harper
Publikováno v:
Chemphyschem : a European journal of chemical physics and physical chemistry. 22(10)
The ability to theoretically predict accurate NMR chemical shifts in solids is increasingly important due to the role such shifts play in selecting among proposed model structures. Herein, two theoretical methods are evaluated for their ability to as
The hydrogen-bonding environments at the COOH moiety in eight polycrystalline polymorphs of palmitic acid are explored using solid-state NMR. Although most phases have no previously reported crystal structure, measured (13)C chemical shift tensors fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::104c104a8a0848f23ff04428f4ac484c
https://europepmc.org/articles/PMC5878182/
https://europepmc.org/articles/PMC5878182/
Autor:
Lei Lei, Casey M. Schwarz, Ivan I. Kravchenko, A. A. Allerman, Anupama Yadav, Fan Ren, Carlos Anthony Sanchez, Stephen J. Pearton, Luther Wang, Max Shatkhin, Elena Flitsiyan, Yueh-Ling Hsieh, Leonid Chernyak, Ya-Hsi Hwang, S.S. Li, Albert G. Baca
Publikováno v:
ECS Transactions. 61:205-210
AlGaN/GaN High Electron Mobility Transistors (HEMTs) show great promise for applications such as military radar and satellite-based communications systems. Due to the applications in extreme radiation environments, it is important to characterize the
Autor:
Li Liu, Igor Lubomirsky, Leonid Chernyak, Max Shatkhin, Casey M. Schwarz, Stephen J. Pearton, Anupama Yadav, Luther Wang, Fan Ren, Elena Flitsiyan, Ya-Shi Hwang
Publikováno v:
ECS Transactions. 61:171-177
AlGaN/GaN High Electron Mobility Transistors (HEMTs) are the most advanced electronic nitride devices to be used at high temperatures and in harshly radiated environments. A clear understanding of radiation effects on these devices is essential in or
Autor:
Andrew A. Allerman, Lei Lei, Carlos Anthony Sanchez, Ivan I. Kravchenko, Leonid Chernyak, Anupama Yadav, Fan Ren, Stephen J. Pearton, Albert G. Baca, S.S. Li, Ya-Hsi Hwang, Casey M. Schwarz, Luther Wang, Max Shatkhin, Elena Flitsiyan, Yueh-Ling Hsieh
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32:031203
The changes in direct current performance of circular-shaped AlGaN/GaN high electron mobility transistors (HEMTs) after 60Co γ-irradiation doses of 50, 300, 450, or 700 Gy were measured. The main effects on the HEMTs after irradiation were increases