Zobrazeno 1 - 10
of 309
pro vyhledávání: '"Luryi, Serge"'
Autor:
Grinberg, Anatoly A., Luryi, Serge
We believe we have made progress in the age-old problem of divisibility rules for integers. Universal divisibility rule is introduced for any divisor in any base number system. The divisibility criterion is written down explicitly as a linear form in
Externí odkaz:
http://arxiv.org/abs/1401.5486
Autor:
Luryi, Serge, Semyonov, Oleg, Subashiev, Arsen, Abeles, Joseph, Chan, Winston, Shellenbarger, Zane, Metaferia, Wondwosen, Lourdudoss, Sebastian
Publikováno v:
Solid State Electronics 95 (2014), pp. 15-18
Radiative efficiency of highly luminescent bulk InP wafers severely degrades upon heat treatment involved in epitaxial growth of quaternary layers and fabrication of photodiodes on the surface. This unfortunate property impedes the use of bulk InP as
Externí odkaz:
http://arxiv.org/abs/1312.1981
The shape of the photoluminescence line excited at an edge face of InP wafer and recorded from the broadside is used to investigate the intrinsic emission spectrum. The procedure is much less sensitive to the surface properties and the carrier kineti
Externí odkaz:
http://arxiv.org/abs/1306.2928
We study the spatial distribution of minority carriers arising from their anomalous photon-assisted diffusion upon photo-excitation at an edge of n-InP slab for temperatures ranging from 300 K to 78 K. The experiment provides a realization of the "L\
Externí odkaz:
http://arxiv.org/abs/1302.4399
Autor:
Subashiev, Arsen, Luryi, Serge
Spatial spread of minority carriers produced by optical excitation in semiconductors is usually well described by a diffusion equation. The classical diffusion process can be viewed as a result of a random walk of particles in which every step has th
Externí odkaz:
http://arxiv.org/abs/1212.3001
Publikováno v:
Phys. Rev. B 86, 201201 (R) (2012)
We study the photoluminescence spectra excited at an edge side of n-InP slabs and observed from the broadside. In a moderately doped sample the intensity drops off as a power-law function of the distance from the excitation - up to several millimeter
Externí odkaz:
http://arxiv.org/abs/1205.4975
Autor:
Luryi, Serge, Subashiev, Arsen
High radiative efficiency in moderately doped n-InP results in the transport of holes dominated by photon-assisted hopping, when radiative hole recombination at one spot produces a photon, whose interband absorption generates another hole, possibly f
Externí odkaz:
http://arxiv.org/abs/1202.5576
We study the photoluminescence spectra of n-doped InP bulk wafers, both in the reflection and the transmission geometries relative to the excitation beam. From the observed spectra we estimate the spatial distribution of minority carriers allowing fo
Externí odkaz:
http://arxiv.org/abs/1201.0201
Autor:
Semyonov, Oleg G., Subashiev, Arsen V., Shabalov, Alexander, Lifshitz, Nadia, Chen, Zhichao, Hosoda, Takashi, Luryi, Serge
We observed and studied strong reduction of optical reflection from the surface of InP wafers after high-temperature annealing. The effect is observed over a wide range of the incident wavelengths, and in the transparency band of the material it is a
Externí odkaz:
http://arxiv.org/abs/1112.5398
Implementation of a semiconductor as a scintillator with a lattice-matched surface photo-diode for radiation detection requires efficient luminescence collection. Low and heavily doped bulk n-InP has been studied to optimize luminescence transmission
Externí odkaz:
http://arxiv.org/abs/1011.2132