Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Luoto, Hannu"'
Publikováno v:
In Solid State Electronics 2007 51(2):328-332
Publikováno v:
Luoto, H, Suni, T, Henttinen, K & Dekker, J 2006, ' Fabrication of silicon diaphragms by mechanical thinning ', Paper presented at 7th international workshop Thin Semiconductor Devices, Munich, Germany, 28/11/06-29/11/06 .
In order to allow greater freedom in MEMS designing, there is increasing interest in SOI wafers with buried structures (cavities, different support structures). A fabrication process for such wafers is presented in figure 1. Fabrication of the pre-pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=355e65625b88::3b5b892e54b62a01af50766cc3310869
https://cris.vtt.fi/en/publications/2dd61321-4d34-4c70-88a1-67378640419f
https://cris.vtt.fi/en/publications/2dd61321-4d34-4c70-88a1-67378640419f
Publikováno v:
Saarilahti, J, Kattelus, H & Luoto, H 2006, Electrical properties of atomic layer deposited (ALD) TiO2 films . in MAM-2006 : Book of Abstracts . pp. 258-259, MAM-2006: Materials for Advanced Metallization, Grenoble, Switzerland, 6/03/06 .
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=355e65625b88::6c23084cd1e7bff24400b1b58923588f
https://cris.vtt.fi/en/publications/d620b0c1-bd3e-4d38-862b-110061827673
https://cris.vtt.fi/en/publications/d620b0c1-bd3e-4d38-862b-110061827673
Publikováno v:
Suni, T, Henttinen, K, Luoto, H, Dekker, J, Mäkinen, J & Torkkeli, A 2006, Bonded and mechanically thinned pre-etched SOI structures . in EuroSOI2006, conference proceedings . pp. 121-122, EuroSOI 2006, Grenoble, France, 8/03/06 .
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=355e65625b88::2efaafeb29dadf92b39af53f7cc3ac47
https://cris.vtt.fi/en/publications/3028d41f-aae9-436f-962c-f5a7d8563462
https://cris.vtt.fi/en/publications/3028d41f-aae9-436f-962c-f5a7d8563462
Autor:
Suni, Tommi, Henttinen, Kimmo, Lipsanen, Antti, Dekker, James, Luoto, Hannu, Kulawski, Martin
Publikováno v:
Suni, T, Henttinen, K, Lipsanen, A, Dekker, J, Luoto, H & Kulawski, M 2005, Wafer scale packaging of MEMS by using plasma activated wafer bonding . in Semiconductor Wafer Bonding VIII: Science, Technology and Applications : Proceedings of the International Symposium . Electrochemical Society ECS, ECS Proceedings Volumes, vol. 2005-02, pp. 173-183, 8th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications, Quebec City, Canada, 15/05/05 .
Plasma assisted bonding is investigated for wafer scale encapsulation of MEMS. As direct bonding requires smooth and planar surfaces, CVD oxides are deposited on top of the structures and subsequently planarized by CMP. Care has to be taken in order
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=355e65625b88::283a411302cdc1f1c4b3cada208c2900
https://cris.vtt.fi/en/publications/38baffa5-2f98-468f-8fdb-50f62294e72d
https://cris.vtt.fi/en/publications/38baffa5-2f98-468f-8fdb-50f62294e72d
Autor:
Suni, Tommi, Henttinen, Kimmo, Dekker, James, Luoto, Hannu, Kulawski, Martin, Mäkinen, J., Mutikainen, R.
Publikováno v:
Suni, T, Henttinen, K, Dekker, J, Luoto, H, Kulawski, M, Mäkinen, J & Mutikainen, R 2005, SOI wafers with buried cavities . in Semiconductor Wafer Bonding VIII: Science, Technology and Applications : Proceedings of the International Symposium . Electrochemical Society ECS, ECS Proceedings Volumes, vol. 2005-02, pp. 216-225, 8th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications, Quebec City, Canada, 15/05/05 .
Direct bonding and mechanical thinning of pre-etched silicon wafers have been studied for the fabrication of SOI wafers with buried cavities. Under thinning of the cap wafer by grinding and polishing, the thin silicon diaphragm is bent and non-unifor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=355e65625b88::0d38bb44e0260dab181c90b6f6d654a2
https://cris.vtt.fi/en/publications/1150ce30-3b42-44dd-8906-758a2c8283e1
https://cris.vtt.fi/en/publications/1150ce30-3b42-44dd-8906-758a2c8283e1
Publikováno v:
Luusua, I, Henttinen, K, Pekko, P, Vehmas, T & Luoto, H 2005, Through-wafer polysilicon interconnect fabrication with in-situ boron doping . in Symposium J-Micro-and Nanosystems-Materials and Devices ., J5.5, Materials Research Society, MRS Online Proceedings, vol. 872, pp. 77-81, 2005 MRS Spring Meeting, Symposium J: Micro-and Nanosystems-Materials and Devices, San Francisco, California, United States, 28/03/05 . https://doi.org/10.1557/PROC-872-J5.5
Bulk micromachining technology can be used to produce conducting through-wafer polysilicon interconnects, i.e., polysilicon via plugs. This paper presents the process fabrication steps of polysilicon via plugs with in-situ boron doped polysilicon mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=355e65625b88::9ccf997e253886e559c800ea9c7d5eff
https://cris.vtt.fi/en/publications/c1cb4ca6-dbbb-48e5-84a6-9cdf4625f20b
https://cris.vtt.fi/en/publications/c1cb4ca6-dbbb-48e5-84a6-9cdf4625f20b
Autor:
Suni, Tommi, Henttinen, Kimmo, Dekker, James, Luoto, Hannu, Kulawski, Martin, Kattelus, Hannu
Publikováno v:
Suni, T, Henttinen, K, Dekker, J, Luoto, H, Kulawski, M & Kattelus, H 2005, Wafer scale encapsulation of MEMS by direct bonding . in 16th Micromechanics Europe Workshop : Book of abstracts . Chalmers, Göteborg, pp. 119-122, 16th Micromechanics Europe Workshop, MME05, Göteborg, Sweden, 4/09/05 .
We have developed methods for wafer level MEMS encapsulation by using low temperature direct bonding. Such packaging method is fast, provides a hermetic seal, does not require intermediate layers such as metals or adhesives and is IC-compatible. Stro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=355e65625b88::e11c267e24e30b0a326791a73b8e802b
https://cris.vtt.fi/en/publications/018c3049-8bf7-4ec7-ad08-92c8885ad9e9
https://cris.vtt.fi/en/publications/018c3049-8bf7-4ec7-ad08-92c8885ad9e9
Autor:
Henttinen, Kimmo, Suni, Tommi, Nurmela, Arto, Luoto, Hannu, Suni, Ilkka, Airaksinen, Veli-Matti, Karirinne, Suvi, Cai, M., Lau, S.S
Publikováno v:
Henttinen, K, Suni, T, Nurmela, A, Luoto, H, Suni, I, Airaksinen, V-M, Karirinne, S, Cai, M & Lau, S S 2003, ' Transfer of thin Si layers by cold and thermal ion cutting ', Journal of Materials Science: Materials in Electronics, vol. 14, pp. 299-303 . https://doi.org/10.1023/A:1023963626033
We have used the crack opening method to study the mechanical exfoliation behaviour in hydrogen implanted and bonded Cz Si. We found out that the crystal orientation and boron doping influence the temperature required for mechanical layer transfer. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=355e65625b88::ed9aa8a6071da48cc94d4ad0806613c4
https://cris.vtt.fi/en/publications/5f970fb0-b75f-456d-944a-07331efb8142
https://cris.vtt.fi/en/publications/5f970fb0-b75f-456d-944a-07331efb8142
Autor:
Henttinen, Kimmo, Suni, Luoto, Hannu, Nurmela, Arto, Suni, Ilkka, Airaksinen, Veli-Matti, Lau, S.
Publikováno v:
Henttinen, K, Suni, Luoto, H, Nurmela, A, Suni, I, Airaksinen, V-M & Lau, S 2002, Transfer of thin Si layers by cold and thermal ion-cutting . in Conference Papers 2002. 4th International Conference on Materials for Microelectronics and Nanoengineering, MFMN 2002 : Espoo, FI, 10-12 June 2002 . IOM Communications, Lontoo, pp. 49-52, 4th International Conference on Materials for Microelectronics and Nanoengineering, MFMN 2002, Espoo, Finland, 10/06/02 .
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=355e65625b88::5b04124387b3eb653449730fe77f89f6
https://cris.vtt.fi/en/publications/177f751c-ac16-43a0-8e52-1dd9e4adefed
https://cris.vtt.fi/en/publications/177f751c-ac16-43a0-8e52-1dd9e4adefed