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Publikováno v:
Proceedings of SPIE; October 2022, Vol. 12287 Issue: 1 p122871J-122871J-6, 1105846p
Autor:
Luo Jinsheng1 jslaw73@hotmail.com
Publikováno v:
Petroleum - Gas University of Ploiesti Bulletin, Educational Sciences Series. 2010, Vol. 62 Issue 1B, p57-65. 9p.
Publikováno v:
Solid-State Electronics. 42:458-462
In this paper, we present a novel physics based analytic model for C–V characteristics of planar Schottky diodes made by a GaAs MESFET process and used in GaAs MMIC. The model focuses on small dimensions, planar technology and ion implantation tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f253d7f4e169eaf973f12fe6ad6f4d4
https://doi.org/10.1016/s0038-1101(97)00218-9
https://doi.org/10.1016/s0038-1101(97)00218-9
Publikováno v:
Cryogenics. 36:915-919
In this paper, the effective densities of states for the conduction and valence bands, Nc and Nv, the intrinsic carrier concentration ni, and the ionized doping concentration in strained Si1−xGex layers grown on (001) Si substrates are analytically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3450d6e7c1b0058124ff9fd26b11501
https://doi.org/10.1016/s0011-2275(96)00066-5
https://doi.org/10.1016/s0011-2275(96)00066-5
Publikováno v:
Acta Physica Sinica (Overseas Edition). 4:531-535
Heavily C-doped GaAs films, grown by metalorganic chemical vapor deposition with CCl4 as external carbon source, have been studied by Hall-effect measurements, high-resolution double-crystal x-ray diffraction, and secondary-ion-mass spectroscopy (SIM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76dde201efcc09c238c1c837addc61d1
https://doi.org/10.1088/1004-423x/4/7/007
https://doi.org/10.1088/1004-423x/4/7/007
Publikováno v:
Acta Physica Sinica (Overseas Edition). 3:384-389
The dependence of the excitonic lifetime on the well width has been studied in conventional GaAs/AlGaAs quantum wells. Two clearly different variations of the measured excitonic lifetime have been observed. For wide well widths, we find a nearly line
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55a4f7498e5537b419a8107e243e2af5
https://doi.org/10.1088/1004-423x/3/5/009
https://doi.org/10.1088/1004-423x/3/5/009
Autor:
Liang Zhenxian, Luo Jinsheng
Publikováno v:
Journal of Electronics (China). 8:276-282
The residual electrically active defects in (4×1012 cm−2 (30KeV)+5×1012 cm−2 (130 KeV)) Si-implanted LEC undoped Si−GaAs activated by two-step rapid thermal annealing(RTA) LABELED AS 970°C(9S)+750°C(12S) have been investigated with deep lev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74023087d69b8cedd639e9839e99d998
https://doi.org/10.1007/bf02778379
https://doi.org/10.1007/bf02778379
Publikováno v:
Microwave and Optical Technology Letters. 12:31-33
A variable-capacitance model for a GaAs MESFET three-terminal varactor applied to MMIC voltage-controlled runing frequency is presented. In this model, because the source is connected with the drain, the gate capacitance is only considered by analyti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59913dd7800fa6207167797a82263e44
https://doi.org/10.1002/(sici)1098-2760(199605)12:1<31::aid-mop9>3.0.co
https://doi.org/10.1002/(sici)1098-2760(199605)12:1<31::aid-mop9>3.0.co
Publikováno v:
Proceedings of SPIE; 9/12/2022, Vol. 12287, p122871J-122871J-6, 1p