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Autor:
Lung-Yi Tseng, 曾隆鎰
100
In this thesis, AlGaN/AlN/GaN high electron mobility transistors (HEMT) using ozone water treatment. As a surface passivation layer and metal-oxide-semiconductor HEMTs (MOS-HEMT) using ozone water as gate oxide have been investigated and com
In this thesis, AlGaN/AlN/GaN high electron mobility transistors (HEMT) using ozone water treatment. As a surface passivation layer and metal-oxide-semiconductor HEMTs (MOS-HEMT) using ozone water as gate oxide have been investigated and com
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/wugmtp
Autor:
Lung-Yi Tseng, Han-Yin Liu, Ching-Sung Lee, Wei-Chou Hsu, Bo-Yi Chou, Chiu-Sheng Ho, Chang-Luen Wu
Publikováno v:
IEEE Transactions on Electron Devices. 60:2231-2237
Al0.3Ga0.7N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors (HEMTs) grown on Si substrates by using ozone water oxidation method are investigated. Superior improvements of 52.2% in two-terminal gate-drain breakdown voltage (BVGD)