Zobrazeno 1 - 9 of 9 pro vyhledávání: '"Lung Tat Ng"'
2
High-resolution mastering using AlNiGd metallic glass thin film as thermal absorption layer
Autor: Chow Tian Lim, Gao Qiang Yuan, Mei Ling Lee, Lung Tat Ng, Chee Lip Gan, Kai Dong Ye
Publikováno v: Intermetallics. 18:2308-2311
We have succeeded in patterning narrow lines and dots with nano-scale dimensions of ZnS–SiO2 using Al90Ni3Gd7 metallic glass thin film as the thermal absorption layer. The laser thermal lithography technique was carried out using a semiconductor la
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f70a084fd499743eee0250dc46dc0e3f
https://doi.org/10.1016/j.intermet.2010.07.023
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3
Multi-Dimensional Multi-Level Optical Pickup Head
Autor: Yang Beng Lim, Chong Chun Yang, Chong Wei Chuah, Gaoqiang Yuan, Lung Tat Ng, Kian Guan Lim, W. L. Tan, Lee Hou Ting, Luping Shi, Tow Chong Chong, Yeng Leong Chong
Publikováno v: Japanese Journal of Applied Physics. 47:5933-5935
An optical pickup head for providing multi-dimensional multi-level (MDML) optical recording is proposed and designed according to the MDML optical recording concept which uses both intensity and polarization of light. Through dynamic testing separate
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::77445ff74c403671c20404c48d07700f
https://doi.org/10.1143/jjap.47.5933
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4
Enabling Universal Memory by Overcoming the Contradictory Speed and Stability Nature of Phase-Change Materials
Autor: Desmond Loke, Weijie Wang, Luping Shi, Leong-Tat Law, Rong Zhao, Yee-Chia Yeo, Tow Chong Chong, Lung-Tat Ng, Andrea L. Lacaita, Kian Guan Lim, Hongxin Yang
Publikováno v: Scientific Reports
The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. Phase-change materials are highly promising in this respect. However, their
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5345dcfe05f733c49e010c4a407e27eb
http://hdl.handle.net/11311/660404
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5
Nano Superlattice-like Materials as Thermal Insulators for Phase-Change Random Access Memory
Autor: L. P. Shi, Y. C. Yeo, Tow Chong Chong, K. G. Lim, Lung-Tat Ng, Hongxin Yang, Weijie Wang, Rong Zhao, Desmond Loke
Publikováno v: MRS Proceedings. 1404
Nanoscale superlattice-like (SLL) dielectric was employed to reduce the power consumption of the Phase-change random access memory (PCRAM) cells. In this study, we have simulated and found that the cells with the SLL dielectric have a higher peak tem
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8234157b16af4995b648968146f7a247
https://doi.org/10.1557/opl.2012.482
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6
Ultrafast switching in nanoscale phase-change random access memory with superlattice-like structures
Autor: Desmond Loke, Luping Shi, Kian Guan Lim, Yee-Chia Yeo, Tow Chong Chong, Lung-Tat Ng, Weijie Wang, Rong Zhao, Hongxin Yang
Publikováno v: Nanotechnology. 22:254019
Phase-change random access memory cells with superlattice-like (SLL) GeTe/Sb(2)Te(3) were demonstrated to have excellent scaling performance in terms of switching speed and operating voltage. In this study, the correlations between the cell size, swi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c21435de220bd4e794f31fe8c06bad78
https://doi.org/10.1088/0957-4484/22/25/254019
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7
Superlatticelike dielectric as a thermal insulator for phase-change random access memory
Autor: Desmond Loke, Luping Shi, Rong Zhao, Lung-Tat Ng, Yee-Chia Yeo, Weijie Wang, Kian Guan Lim, Tow Chong Chong, Hongxin Yang
Publikováno v: Applied Physics Letters. 97:243508
Superlatticelike (SLL) dielectric comprising of Ge2Sb2Te5 and SiO2 was employed to reduce the power and increase the speed of phase-change random access memories (PCRAMs). In this study, we found that PCRAM cells with SLL dielectric require lower cur
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0fd5891c26b83a120a45daad3bdc9898
https://doi.org/10.1063/1.3527919
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8
Akademický článek
Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory.
Autor: Hongxin Yang, Luping Shi, Rong Zhao, Hock Koon Lee, Jianming Li, Kian Guan Lim, Lung Tat Ng, Tow Chong Chong
Publikováno v: ECS Journal of Solid State Science & Technology; 2015, Vol. 4 Issue 3, pN13-N17, 5p
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