Zobrazeno 1 - 10
of 333
pro vyhledávání: '"Lundstrom, Mark S."'
Autor:
Luo, Zhe, Maassen, Jesse, Deng, Yexin, Du, Yuchen, Garrelts, Richard P., Lundstrom, Mark S., Ye, Peide D., Xu, Xianfan
Publikováno v:
Nature Communications 6, 8572 (2015)
Black phosphorus has been revisited recently as a new two-dimensional material showing potential applications in electronics and optoelectronics. Here we report the anisotropic in-plane thermal conductivity of suspended few-layer black phosphorus mea
Externí odkaz:
http://arxiv.org/abs/1503.06167
Akademický článek
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A formalism for incorporating electron-phonon scattering into the nonequilibrium Green's function (NEGF) framework that is applicable to planar MOSFETs is presented. Restructuring the NEGF equations in terms of approximate summation of transverse mom
Externí odkaz:
http://arxiv.org/abs/1209.4878
Publikováno v:
Journal of Applied Physics (Vol.108, Issue 8), 2010
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the tunneling barrie
Externí odkaz:
http://arxiv.org/abs/1002.5035
The band-to-band tunneling transistors have some performance advantages over the conventional MOSFETs due to the <60mV/dec sub-threshold slope. In this paper, carbon nanotubes are used as a model channel material to address issues that we believe wil
Externí odkaz:
http://arxiv.org/abs/1001.5247
Publikováno v:
J. Appl. Phys. 107, 054502 (2010)
The question of whether relaxing momentum conservation can increase the performance of thermionic cooling device is examined. Both homojunctions and heterojunctions are considered. It is shown that for many cases, a non-conserved lateral momentum mod
Externí odkaz:
http://arxiv.org/abs/0906.5157
Publikováno v:
J. Appl. Phys. 105, 034506 (2009)
The role of dimensionality on the electronic performance of thermoelectric devices is clarified using the Landauer formalism, which shows that the thermoelectric coefficients are related to the transmission, T(E), and how the conducing channels, M(E)
Externí odkaz:
http://arxiv.org/abs/0811.3632
An analysis of recent experimental data for high-performance In0.7Ga0.3As high electron mobility transistors (HEMTs) is presented. Using a fully quantum mechanical, ballistic model, we simulate In0.7Ga0.3As HEMTs with gate lengths of LG = 60nm, 85, a
Externí odkaz:
http://arxiv.org/abs/0810.1540
Publikováno v:
J. Appl. Phys. 104, 094511 (2008)
A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict that this d
Externí odkaz:
http://arxiv.org/abs/0807.1709
Publikováno v:
Nano Letters, 8 (6), pp. 1596--1601, 2008.
Optical emission from carbon nanotube transistors (CNTFETs) has recently attracted significant attention due to its potential applications. In this paper, we use a self-consistent numerical solution of the Boltzmann transport equation in the presence
Externí odkaz:
http://arxiv.org/abs/0805.0246