Zobrazeno 1 - 10
of 254
pro vyhledávání: '"Lun-Lun Chen"'
Autor:
Chao-Yi Wu, Chia-Chun Lin, Rong-Jhe Lyu, Min-Lin Wu, Lun-Lun Chen, Chun-Yen Chao, Yung-Hsien Wu
Publikováno v:
Microelectronic Engineering. 109:216-219
The YGeOx enjoys a low interface trap density of 2.1i?1011cm-2eV-1.Low leakage current of 3.1i?10-10A/cm2 at the effective electric field of 1MV/cm.13mV flatband voltage shift for BTI test under 10MV/cm for 8000s at 85?C. YGeOx formed by thermal oxid
Publikováno v:
IEEE Transactions on Nanotechnology. 12:436-441
Due to a larger band offset and a higher permittivity compared to Si $_{3}$ N $_{4}$ , Ge $_{3}$ N $_4$ formed by NH $_{3}$ plasma nitridation of an amorphous Ge film was explored in this study as the charge-trapping layer for flash memory devices. A
Publikováno v:
IEEE Transactions on Nanotechnology. 11:483-491
An amorphous (ZrO2)x(La2O3)1-x alloy formed by depositing a ZrO2/La2O3/ZrO2 laminate and a subsequent annealing was employed as the gate dielectric for metal-oxide-semiconductor (MOS) devices. The (ZrO2)x(La2O3)1-x alloy is found to have a high permi
Publikováno v:
Microelectronic Engineering. 88:1361-1364
A Ge-stabilized tetragonal ZrO"2 (t-ZrO"2) film with permittivity (@k) of 36.2 was formed by depositing a ZrO"2/Ge/ZrO"2 laminate and a subsequent annealing at 600^oC, which is a more reliable approach to control the incorporated amount of Ge in ZrO"
Publikováno v:
Surface and Coatings Technology. 205:2914-2918
The annealing-induced amorphization of a sputtered glass-forming Cu51Zr42Al4Ti3 thin film has been clarified by in-situ transmission electron microscopy in conjunction with ex-situ atomic force microscopy and X-ray diffractometry. Upon heating of the
Publikováno v:
ECS Transactions. 33:203-209
An amorphous (ZrO2)x(La2O3)1-x alloy formed by deposition of ZrO2/La2O3/ZrO2 laminate and a subsequent annealing was employed as the gate dielectric for MOS devices and the impact of a SiON interfacial layer on device performance was also explored in
Publikováno v:
ECS Transactions. 28:153-160
A tetragonal ZrO2 film stabilized by incorporating Ge atoms from an underlying Ge layer through a thermal annealing was investigated as the gate dielectric for Ge MOS devices. Formation of a tetragonal ZrO2 film and admixture of Ge atoms into a ZrO2
Publikováno v:
Thin Solid Films. 515:8140-8143
Iron disilicides have been long recognized to be one of the most interesting metal silicides since the disilicides can appear in different crystal structures and exhibit metallic, semiconducting and magnetic properties. Nanostructures have gained inc
Publikováno v:
Microelectronic Engineering. 84:1801-1805
In this paper, effects of capping layers on formation and electrical properties of Ni-silicided junctions have been investigated. Nickel silicide films using the Ti or TiN-capped layer process are used to compare to those by the uncapped process. The