Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Lun-Chun Chen"'
Autor:
Siao-Cheng Yan, Chong-Jhe Sun, Meng-Ju Tsai, Lun-Chun Chen, Mu-Shih Yeh, Chien-Chang Li, Yao-Jen Lee, Yung-Chun Wu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 589-593 (2020)
Germanium is a promising alternative material for use in advanced technology nodes because it exhibits symmetrical mobility of holes and electrons. Embedded nonvolatile memory (NVM) is essential in electronic devices with integrated circuit (IC) tech
Externí odkaz:
https://doaj.org/article/a389f55f76de47b99c14bd024bcaea31
Autor:
Lun-Chun Chen, Hung-Bin Chen, Yu-Shuo Chang, Shih-Han Lin, Ming-Hung Han, Jia-Jiun Wu, Mu-Shih Yeh, Yu-Ru Lin, Yung-Chun Wu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 168-173 (2019)
A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient
Externí odkaz:
https://doaj.org/article/3a16f88ca06c45609218901b2951549b
Autor:
Yu-Ru Lin, Yi-Yun Yang, Yu-Husien Lin, Erry Dwi Kurniawan, Mu-Shih Yeh, Lun-Chun Chen, Yug-Chun Wu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1187-1191 (2018)
This comprehensive study of the horizontally p-type stacked nanosheets inversion mode thinfilm transistor with gate-all-around (SNS-GAATFT) and multi-gate (SNS-TFT) structures. The stacked nanosheets device structure, fabrication, and electrical char
Externí odkaz:
https://doaj.org/article/71a2d47776ec47248171195c9720135f
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 2, Pp 50-54 (2016)
The short-channel effect (SCE) is an important issue in CMOS technology. In this paper, a junctionless (JL) poly-Si nanowire FET (NW-FET) with gated raised source/drain (S/D) was demonstrated to suppress the SCE. The gated raised S/D structure enhanc
Externí odkaz:
https://doaj.org/article/43ca6c1f17e44f30ad27ac6552c44340
Autor:
Lun-Chun Chen, Mu-Shih Yeh, Yu-Ru Lin, Ko-Wei Lin, Min-Hsin Wu, Vasanthan Thirunavukkarasu, Yung-Chun Wu
Publikováno v:
AIP Advances, Vol 7, Iss 2, Pp 025301-025301-5 (2017)
We propose the concept of the electrical junction in a junctionless (JL) field-effect-transistor (FET) to illustrate the transfer characteristics of the JL FET. In this work, nanowire (NW) junctionless poly-Si thin-film transistors are used to demons
Externí odkaz:
https://doaj.org/article/30813557d253485998b08c763eca8106
Autor:
Yao-Jen Lee, Mu-Shih Yeh, Chien-Chang Li, Lun-Chun Chen, Yung-Chun Wu, Siao-Cheng Yan, Meng-Ju Tsai, Chong-Jhe Sun
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 589-593 (2020)
Germanium is a promising alternative material for use in advanced technology nodes because it exhibits symmetrical mobility of holes and electrons. Embedded nonvolatile memory (NVM) is essential in electronic devices with integrated circuit (IC) tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9341db0d94edcf77a7a82737857bb59
https://doi.org/10.1109/jeds.2020.2999616
https://doi.org/10.1109/jeds.2020.2999616
Autor:
Jia-Jiun Wu, Ming-Hung Han, Shih-Han Lin, Hung-Bin Chen, Mu-Shih Yeh, Yung-Chun Wu, Lun-Chun Chen, Yu-Shuo Chang, Yu-Ru Lin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 168-173 (2019)
A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc1a8f39b07124635a644e25c6db6634
https://doi.org/10.1109/jeds.2018.2886446
https://doi.org/10.1109/jeds.2018.2886446
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 2, Pp 50-54 (2016)
The short-channel effect (SCE) is an important issue in CMOS technology. In this paper, a junctionless (JL) poly-Si nanowire FET (NW-FET) with gated raised source/drain (S/D) was demonstrated to suppress the SCE. The gated raised S/D structure enhanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5aa8ddca1a498ec0bca9ba38791f178
https://doi.org/10.1109/jeds.2016.2514478
https://doi.org/10.1109/jeds.2016.2514478
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P3202-P3205
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47b479f206e3fe2e33cd72a76db42c66
https://doi.org/10.1149/2.0271604jss
https://doi.org/10.1149/2.0271604jss
Publikováno v:
IEEE Electron Device Letters. 38:1256-1258
A high-performance stacked double-layer N-channel poly-Si nanosheet (NS) multigate thin-film transistor (DLNS-TFT) is demonstrated successfully. The proposed device has low cost, is easy to fabricate, and is compatible with Si MOSFET, active-matrix o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44bbb6850321e00ffc6a17cc140badf6
https://doi.org/10.1109/led.2017.2725325
https://doi.org/10.1109/led.2017.2725325