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Autor:
Fu-Jen Hsu, Kuo-Ting Chu, Lumg-Shehng Lee, Jheng-Yi Jiang, Chwan-Ying Lee, Chih-Fang Huang, Chien-Chung Hung
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In order to prevent bipolar degradation and improve the performance of body diode in SiC MOSFET, JBS embedded SiC MOSFET technology is attracting researchers’ attention. In this paper, the discussion focuses on JMOS, where the major feature is reta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eabcdd4b6e42aee0f6d562a097cb3706
https://doi.org/10.1109/ispsd46842.2020.9170045
https://doi.org/10.1109/ispsd46842.2020.9170045
