Výsledky vyhledávání - "Lukyanova, L. N."

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Thermal conductivity for p-(Bi, Sb)$_{2}$Te$_{3}$ films of topological insulators

Autor: Lukyanova, L N, Boikov, Yu A, Usov, O A, Danilov, V A, Makarenko, I V, Petrov, V N

The temperature dependences of the total, crystal lattice and electronic thermal conductivities were investigated in films of topological insulators p-Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ and p-Bi$_{2}$Te$_{3}$ formed by discrete and thermal evaporation meth

Externí odkaz: http://arxiv.org/abs/2207.04477

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Topological layered n-type thermoelectrics based on bismuth telluride solid solutions

Autor: Lukyanova, L. N., Makarenko, I. V., Usov, O. A.

In topological n-type thermoelectrics based on $Bi_{2}Te_{3}$ with atomic substitutions Bi $\rightarrow$ In, Te $\rightarrow$ Se, S, the morphology and the surface states of Dirac fermions on the interlayer (0001) surface of van der Waals were studie

Externí odkaz: http://arxiv.org/abs/2005.09935

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Scanning tunneling spectroscopy of the surface states of Dirac fermions in thermoelectrics based on bismuth telluride

Autor: Lukyanova, L N, Makarenko, I V, Usov, O A, Dementev, P A

Morphology of the interlayer van der Waals surface and differential tunneling conductance in p-Bi2-xSbxTe3-ySey solid solutions were studied by scanning tunneling microscopy and spectroscopy in dependence on compositions. Topological characteristics

Externí odkaz: http://arxiv.org/abs/1712.08797

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Quantum oscillations of magnetoresistance of the submicrometer thick bismuth telluride-based films

Autor: Lukyanova, L. N., Boikov, Yu. A., Danilov, V. A., Usov, O. A., Volkov, M. P., Kutasov, V. A.

Hetero-epitaxial films based on bismuth telluride with excess of Te were grown by hat wall technique at the surface of the mica (muscovite). Galvanomagnetic properties of the thin films were measured, and quantum oscillations of the magnetoresistance

Externí odkaz: http://arxiv.org/abs/1412.0209

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Thermoelectric and galvanomagnetic properties of bismuth chalcogenide nanostructured hetero-epitaxial films

Autor: Lukyanova, L. N., Boikov, Yu. A., Danilov, V A, Usov, O A, Volkov, M P, Kutasov, V. A.

Publikováno v: Semiconductor Science and Technology 30 (2015) 015011

Hot wall technique was used to grow block single crystal films of Bi_2Te_3 and solid solutions of Bi_(0.5)Sb_(1.5)Te_3 on mica (muscovite) substrates. X-ray diffraction studies demonstrated that the crystalline c-axis in the films was normal to the s

Externí odkaz: http://arxiv.org/abs/1407.3368

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