Výsledky vyhledávání - "Lukovkin, A."

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Impact of geometrical parameters on optical properties of negative curvature hollow-core fibers

Autor: Alagashev, G. K., Pryamikov, A. D., Kosolapov, A. F., Kolyadin, A. N., Lukovkin, A. Yu., Biriukov, A. S .

We analyze the impact of geometrical parameters on such important optical characteristics of negative curvature hollow-core fibers (NCHCFs) as waveguide dispersion, waveguide losses and the structure of transmission bands. We consider both theoretica

Externí odkaz: http://arxiv.org/abs/1412.7084

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Akademický článek

Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI

Autor: S. P. Novosyadliy, V. M. Lukovkin, R. Melnyk, A. V. Pavlyshyn

Publikováno v: Фізика і хімія твердого тіла, Vol 21, Iss 2, Pp 361-364 (2020)

In this paper described researched essentials and physical mechanisms of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer. Conducted computer modeling of MESFET with p-channel: distributions of potential, volumetric charge, current

Externí odkaz: https://doaj.org/article/13a6536ff7e8469bad0ec44a69de454d

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Akademický článek

Tax maneuver in oil and gas industry: the first results of the tax on an additional income and prospects for development

Autor: N. V. Ponomarevа, A. L. Lukovkin

Publikováno v: Путеводитель предпринимателя, Vol 13, Iss 1, Pp 45-54 (2020)

The article is devoted to the introduction of tax on an additional income and its impact on the economy of the country. The basic feasibility of the development of tax on an additional income and the first economic results of the introduction of a ne

Externí odkaz: https://doaj.org/article/b7a3ad06fe1f4aea867bf1d9587b4803

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Akademický článek

Photosensitivity of MESFETs on Epitaxy Layers of GaAs with Monocrystalline Silicon Wafer

Autor: S. Novosyadly, V. Gryga, A. Pavlyshyn, V. Lukovkin

Publikováno v: Фізика і хімія твердого тіла, Vol 20, Iss 4, Pp 453-456 (2020)

Researched essentials and physical mechanisms which determine photosensitivity of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer under their illumination in impure zone absorption spectrum. Conducted experiments showed that sourc

Externí odkaz: https://doaj.org/article/6d26fc14e1d948248cffbff2cdbeb238

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Experimental Study of Laser Initiation of a Light-Sensitive Explosive Charge over a ≈1000 mm2Surface

Autor: A. V. Rudnev, O. M. Lukovkin, I. A. Lukyanenko, Yu. V. Sheikov, S. M. Bat’yanov, N. A. Pon’kin, N. P. Khokhlov

Publikováno v: Combustion, Explosion, and Shock Waves. 57:364-371

This paper presents the results of a study of the initiation of explosive transformation of flat charges 40 mm in diameter and 5 mm thick, made of a low-density ( $$\rho$$ $$\approx$$ 0.9 g/cm3) light-sensitive explosive composition based on fine RDX

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::daa244e1193f0abe79c157e36461dd00
https://doi.org/10.1134/s0010508221030126

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Effect of Current Density Distribution in the Zinc Plating Process

Autor: Mikhail S. Lipkin, Mikhail V. Lukovkin, Leon Oviedo Tamara

Publikováno v: Solid State Phenomena. 316:839-844

This paper presents an analysis of the current density distribution in the zinc plating process, using a two-dimension approach. The simulation presents a model based on COMSOL Multi-physics software. The simulation neglected the effect of mass trans

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::030bf2342f1a83197b328fdcd38d99f7
https://doi.org/10.4028/www.scientific.net/ssp.316.839

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